公开(公告)号：US07206223B1

公开(公告)日：2007-04-17

申请号：US11297203

申请日：2005-12-07

申请人： Joseph J. Nahas ,  Thomas W. Andre ,  Chitra K. Subramanian ,  Nicholas David Rizzo

发明人： Joseph J. Nahas ,  Thomas W. Andre ,  Chitra K. Subramanian ,  Nicholas David Rizzo

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： A magnetoresistive random access memory (MRAM) (900) that is susceptible to a residual magnetic field is compensated during a write operation. A first magnetic field (208) is applied to a memory cell during a first time period, the first magnetic field having a first direction (y) and a first magnitude. A second magnetic field (212) is applied to the memory cell during a second time period and having a second direction (x) and a second magnitude. A third magnetic field (702) is applied to the memory cell during a third time period, wherein the third time period overlaps at least a portion of the second time period, the third magnetic field having a third direction (−y) which is approximately opposite to the first direction of the first magnetic field. Currents are selectively applied through conductors in the memory cell to apply the three magnetic fields.

摘要翻译： 在写入操作期间补偿易受残余磁场影响的磁阻随机存取存储器（MRAM）（900）。 第一磁场（208）在第一时间周期内被施加到存储单元，第一磁场具有第一方向（y）和第一大小。 第二磁场（212）在第二时间段期间被施加到存储器单元并且具有第二方向（x）和第二大小。 在第三时间段期间，第三磁场（702）被施加到存储器单元，其中第三时间周期与第二时间段的至少一部分重叠，第三磁场具有近似的第三方向（-y） 与第一磁场的第一方向相反。 通过存储单元中的导体选择性地施加电流以施加三个磁场。