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    Method of Fabricating CMOS Inverter and Integrated Circuits Utilizing Strained Silicon Surface Channel MOSFETS
    1.
    发明申请
    Method of Fabricating CMOS Inverter and Integrated Circuits Utilizing Strained Silicon Surface Channel MOSFETS 有权
    使用应变硅表面沟道MOSFET制造CMOS逆变器和集成电路的方法

    公开(公告)号：US20100022073A1

    公开(公告)日：2010-01-28

    申请号：US12573589

    申请日：2009-10-05

    申请人： Eugene A. Fitzgerald ,  Nichole Gerrish

    发明人： Eugene A. Fitzgerald ,  Nichole Gerrish

    IPC分类号： H01L21/20

    CPC分类号： H01L27/0922 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/1054

    摘要： A method of fabricating a circuit comprising an nMOSFET includes providing a substrate, depositing a strain-inducing material comprising germanium over the substrate, and integrating a pMOSFET on the substrate, the pMOSFET comprising a strained channel having a surface roughness of less than 1 nm. The strain-inducing material is proximate to and in contact with the pMOSFET channel, the strain in the pMOSFET channel is induced by the strain-inducing material, and a source and a drain of the pMOSFET are at least partially formed in the strain-inducing material.

    摘要翻译： 制造包括nMOSFET的电路的方法包括提供衬底，在衬底上沉积包含锗的应变诱导材料，以及在衬底上集成pMOSFET，pMOSFET包括表面粗糙度小于1nm的应变通道。 应变诱导材料接近并与pMOSFET通道接触，pMOSFET通道中的应变由应变诱导材料诱导，并且pMOSFET的源极和漏极在应变诱导中至少部分地形成 材料。