公开(公告)号：US07112509B2

公开(公告)日：2006-09-26

申请号：US10434571

申请日：2003-05-09

申请人： Yuri Erokhin ,  Okeg V. Konochuk

发明人： Yuri Erokhin ,  Okeg V. Konochuk

IPC分类号： H01L21/76

CPC分类号： H01L21/76243 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a method for generating silicon-on-insulator (SOI) wafers that exhibit a high electrical resistivity. In one embodiment of a method according to the teachings of the invention, a SIMOX process is sandwiched between two Full Oxygen Precipitation (FOP) cycles that sequester interstitial oxygen present in the substrate in the form of oxide precipitates, thereby enhancing the electrical resistivity of the susbtrate.

摘要翻译： 本发明提供一种产生表现出高电阻率的绝缘体上硅（SOI）晶片的方法。 在根据本发明的教导的方法的一个实施方案中，SIMOX方法夹在两个全氧沉淀（FOP）循环之间，以循环形式存在氧化物沉淀物形式存在于衬底中的间隙氧，由此提高了 susbtrate。