公开(公告)号：US4618381A

公开(公告)日：1986-10-21

申请号：US613778

申请日：1984-05-24

申请人： Noritada Sato ,  Yasukazu Seki ,  Osamu Ishiwate

发明人： Noritada Sato ,  Yasukazu Seki ,  Osamu Ishiwate

IPC分类号： H01L21/223 ,  H01L21/225 ,  H01J17/00

CPC分类号： H01L21/223

摘要： A method for adding impurities to a semiconductor base material comprises the steps of placing the base material in a vacuum chamber having an atmosphere containing the impurities as dopants, heating the base material to a temperature not exceeding 400.degree. C., and causing a glow discharge in the vacuum chamber. The impurities are introduced as a gas containing, for example, diboron, phosphine, antimony, arsenic, gallium, or as an organic metal gas such as trimethyl gallium, trimethyl indium, or trimethyl aluminum. To cause the dopant atoms to become substitutional by assuming lattice positions, the base material may be subjected to a second glow discharge in an inert gas atmosphere.

摘要翻译： 将杂质添加到半导体基材中的方法包括以下步骤：将基材放置在具有含有杂质的气氛的真空室中作为掺杂剂，将基材加热到不超过400℃的温度，并使辉光放电 在真空室中。 杂质作为含有例如二硼，膦，锑，砷，镓或作为有机金属气体如三甲基镓，三甲基铟或三甲基铝的气体引入。 为了通过假定晶格位置使掺杂剂原子变成替代物，可以在惰性气体气氛中对基材进行第二辉光放电。