公开(公告)号：US20070096754A1

公开(公告)日：2007-05-03

申请号：US11265824

申请日：2005-11-03

申请人： Michael Johnson ,  Keith Golke ,  Pamela Vogt ,  David Nelson

发明人： Michael Johnson ,  Keith Golke ,  Pamela Vogt ,  David Nelson

IPC分类号： G01R31/302

CPC分类号： G01R31/3181 ,  G01R31/31816

摘要： A simulation model is used to predict a semiconductor device's response to a single event upset. The simulation model is connected to a model of the semiconductor device to be tested. The simulation model switches in an impedance path between a node to be tested in the semiconductor device model and an opposite voltage supply until a predefined amount of charge has been reached via sourcing (for a low to high voltage transition) or sinking (for a high to low voltage transition). When the predefined amount of charge has been reached, the impedance path is switched out. The switching of the impedance path approximates the charge movement that occurs from a heavy ion strike passing through a sensitive volume. By varying the predefined amount of charge, the semiconductor device's susceptibility to SEU can be predicted without having to resort to physical testing.

摘要翻译： 模拟模型用于预测半导体器件对单个事件不安的响应。 仿真模型连接到要测试的半导体器件的模型。 模拟模型切换半导体器件模型中要测试的节点之间的阻抗路径和相反的电源，直到通过源（达到低电压转换）或下沉（达到高电平）达到预定量的电荷 到低压转换）。 当达到预定量的电荷时，阻抗路径被切断。 阻抗路径的切换近似于通过敏感体积的重离子冲击发生的电荷运动。 通过改变预定量的电荷，可以预测半导体器件对SEU的敏感性，而无需诉诸于物理测试。