公开(公告)号：US08906164B2

公开(公告)日：2014-12-09

申请号：US12850938

申请日：2010-08-05

申请人： Chris Kimball ,  Tom Stevenson ,  Peter Muraoka

发明人： Chris Kimball ,  Tom Stevenson ,  Peter Muraoka

IPC分类号： B08B7/00 ,  B08B1/00 ,  H01L21/683

CPC分类号： B08B7/0064 ,  B08B1/00 ,  H01L21/6831

摘要： Methods for stabilizing a ceramic contact surface of an electrostatic chuck, wherein the electrostatic chuck can be disposed within a reaction chamber of a semiconductor wafer processing assembly including a radio frequency source and a coolant gas supply are described herein. The method may include: clamping electrostatically a conditioning wafer to the ceramic contact surface of the electrostatic chuck; and cycling an output power of the radio frequency source and an output pressure of the coolant gas supply for multiple hot/cold cycles. Each of the hot/cold cycles includes a hot abrasion state and a cold abrasion state. At the hot abrasion state, the output power of the radio frequency source is relatively high and the output pressure of the coolant gas supply is relatively low to yield a relatively hot conditioning wafer. At the cold abrasion state, the output power of the radio frequency source is relatively low and the output pressure of the coolant gas supply is relatively high to yield a relatively cool conditioning wafer.

摘要翻译： 本文描述了用于稳定静电卡盘的陶瓷接触表面的方法，其中静电卡盘可以设置在包括射频源和冷却剂气体源的半导体晶片处理组件的反应室内。 该方法可以包括：将调理晶片静电夹持到静电卡盘的陶瓷接触表面; 并且循环射频源的输出功率和多个热/冷循环的冷却剂气体供应的输出压力。 每个热/冷循环包括热磨损状态和冷磨损状态。 在热磨损状态下，射频源的输出功率相对较高，并且冷却剂气体供应的输出压力相对较低以产生相对热调节的晶片。 在冷磨损状态下，射频源的输出功率相对较低，并且冷却剂气体供应的输出压力相对较高以产生相对较冷的调节晶片。

公开(公告)号：US20120031427A1

公开(公告)日：2012-02-09

申请号：US12850938

申请日：2010-08-05

申请人： Chris Kimball ,  Tom Stevenson ,  Peter Muraoka

发明人： Chris Kimball ,  Tom Stevenson ,  Peter Muraoka

IPC分类号： B08B7/00

CPC分类号： B08B7/0064 ,  B08B1/00 ,  H01L21/6831

摘要： Methods for stabilizing a ceramic contact surface of an electrostatic chuck, wherein the electrostatic chuck can be disposed within a reaction chamber of a semiconductor wafer processing assembly including a radio frequency source and a coolant gas supply are described herein. The method may include: clamping electrostatically a conditioning wafer to the ceramic contact surface of the electrostatic chuck; and cycling an output power of the radio frequency source and an output pressure of the coolant gas supply for multiple hot/cold cycles. Each of the hot/cold cycles includes a hot abrasion state and a cold abrasion state. At the hot abrasion state, the output power of the radio frequency source is relatively high and the output pressure of the coolant gas supply is relatively low to yield a relatively hot conditioning wafer. At the cold abrasion state, the output power of the radio frequency source is relatively low and the output pressure of the coolant gas supply is relatively high to yield a relatively cool conditioning wafer.

摘要翻译： 本文描述了用于稳定静电卡盘的陶瓷接触表面的方法，其中静电卡盘可以设置在包括射频源和冷却剂气体源的半导体晶片处理组件的反应室内。 该方法可以包括：将调理晶片静电夹持到静电卡盘的陶瓷接触表面; 并且循环射频源的输出功率和多个热/冷循环的冷却剂气体供应的输出压力。 每个热/冷循环包括热磨损状态和冷磨损状态。 在热磨损状态下，射频源的输出功率相对较高，并且冷却剂气体供应的输出压力相对较低以产生相对热调节的晶片。 在冷磨损状态下，射频源的输出功率相对较低，并且冷却剂气体供应的输出压力相对较高以产生相对较冷的调节晶片。