公开(公告)号：US5142253A

公开(公告)日：1992-08-25

申请号：US517873

申请日：1990-05-02

申请人： Raghuveer Mallavarpu ,  George H. MacMaster ,  M. Paul Puri

发明人： Raghuveer Mallavarpu ,  George H. MacMaster ,  M. Paul Puri

IPC分类号： H01P1/16 ,  H01P1/30 ,  H01P5/08 ,  H01P5/12 ,  H01P5/16 ,  H03F3/60

CPC分类号： H01P5/12

摘要： A cylindrical multi-port combiner having a graceful degradation characteristic with a high degree of isolation (25 db) between ports and a high combining efficiency (>90.degree.) is disclosed. A radially-spaced inner and outer conductor forms a transmission line operating in a balanced mode. Circumferentially spaced plurality of like transmission lines have inner and outer RF absorbers at the outermost regions of the spaced adjacent inner and outer conductors, respectively. A corresponding end of each transmission line in adapted to be connected to one of a corresponding number of phase-matched RF sources. The other end of each transmission line has its inner and outer conductors connected in parallel, respectively, through stepped impedance-transforming transmission lines to form one connector for connection to an output RF load. The RF field of the desired balanced mode does not extend beyond adjacent inner and outer conductors to the absorbers; whereas when a failure of a source occurs, the resulting unbalanced mode will have its field extend to the absorbers to be damped without significantly affecting the output from the remaining operative sources.

公开(公告)号：US06266629B1

公开(公告)日：2001-07-24

申请号：US09182378

申请日：1998-10-29

申请人： Raghuveer Mallavarpu ,  Douglas A. Teeter

发明人： Raghuveer Mallavarpu ,  Douglas A. Teeter

IPC分类号： G06G762

CPC分类号： G06F17/5036

摘要： A method is provided for large signal modeling of a field effect transistor. The method includes establishing a small signal model for the transistor, such model having a gate-source capacitance Cgs and a drain-gate capacitance Cdg, both being functions of a gate-source voltage Vgs and a drain-source voltage Vds. The s-parameters of the transistor are measured and curve fitting is applied to the measured s-parameters to establish small signal model parameters. The small signal model parameters include gate-source capacitance Cgs as a function of Vgs and Vds and gate-drain capacitance Cdg as a function of Vgs and Vds. Curve fitting is applied to Cgs and Cdg to establish large signal gate charge fitting parameters. The established large signal gate charge fitting parameters are used to express a gate-source charge Qgs and a gate-drain charge Qgd as functions of Vgs and a gate-drain voltage Vgd in a large signal model for the transistor.

摘要翻译： 提供了一种用于场效应晶体管的大信号建模的方法。 该方法包括为晶体管建立一个小信号模型，这种模型具有栅极 - 源极电容Cgs和漏极 - 栅极电容Cdg，它们都是栅极 - 源极电压Vgs和漏极 - 源极电压Vds的函数。 测量晶体管的s参数，并将曲线拟合应用于测量的s参数以建立小信号模型参数。 小信号模型参数包括作为Vgs和Vds的函数的栅源电容Cgs和作为Vgs和Vds的函数的栅极 - 漏极电容Cdg。 曲线拟合应用于Cgs和Cdg以建立大信号门电荷拟合参数。 所建立的大信号栅极电荷拟合参数用于在晶体管的大信号模型中表示栅源电荷Qgs和栅极 - 漏极电荷Qgd作为Vgs的函数和栅极 - 漏极电压Vgd。

公开(公告)号：US4897609A

公开(公告)日：1990-01-30

申请号：US138740

申请日：1987-12-28

申请人： Raghuveer Mallavarpu

发明人： Raghuveer Mallavarpu

IPC分类号： H01J23/40 ,  H01J25/02 ,  H03F3/58

CPC分类号： H01J23/40 ,  H01J25/025 ,  H03F3/58

摘要： A tilt-angle gun provides a conically-shaped electron beam formed in a magnetically-shielded region which is injected into a coaxial waveguide of the amplifier embodiment of the invention and into a coaxial cavity of the oscillator embodiment immersed in the main magnetic focussing system to form a hollow gyro beam of large radius. RF power input and the amplified rf power output are simply and easily provided through circular input and output waveguides coupled respectively to each end of the coaxial waveguide by slotted sections. The electron beam and the output rf energy are naturally physically separated so that extraction of the rf output is facilitated and occurs with little rf power loss.

摘要翻译： 倾斜角枪提供形成在磁屏蔽区域中的锥形电子束，其被注入到本发明的放大器实施例的同轴波导中并进入浸入主磁聚焦系统中的振荡器实施例的同轴腔中， 形成大半径的空心陀螺仪。 RF功率输入和放大的射频功率输出通过圆形输入和输出波导简单且容易地提供，圆形输入和输出波导分别通过开槽部分耦合到同轴波导的每个端部。 电子束和输出射频能量自然地物理分离，从而促进了射频输出的提取并且发生在少量的功率损耗。