公开(公告)号：US5321260A

公开(公告)日：1994-06-14

申请号：US922478

申请日：1992-07-31

申请人： Leon Goldstein ,  Rene Vergnaud ,  Jean-Pierre Chardon

发明人： Leon Goldstein ,  Rene Vergnaud ,  Jean-Pierre Chardon

IPC分类号： C30B23/06 ,  C30B23/08 ,  H01L21/203 ,  H05H3/02

CPC分类号： C30B23/066

摘要： Primary molecules are formed by sublimation in a sublimation chamber (2), they are then transferred at a transfer flow-rate to a decomposition head (10) at a higher temperature, and they are transformed therein into secondary molecules that are lighter in weight to form molecular beams (16). In accordance with the invention, the transfer flow-rate is adjusted by adjusting an effective vector flow-rate which is the vector flow-rate of a vector gas inserted into the sublimation chamber via a feed tube (26) and sucked out via a suction tube (30). The invention applies, in particular, to making III-V type semiconductor components by molecular beam epitaxy.

摘要翻译： 通过在升华室（2）中升华形成初级分子，然后以更高的温度将其以转移流速转移到分解头（10），并将它们转化成重量比较轻的二级分子 形成分子束（16）。 根据本发明，通过调节作为通过供给管（26）插入升华室的向量气体的向量流量的有效矢量流量来调节转印流量，并通过抽吸 管（30）。 本发明特别适用于通过分子束外延制造III-V型半导体元件。