Predictive wafer temperature control system and method
    1.
    发明授权
    Predictive wafer temperature control system and method 有权
    预测晶圆温度控制系统及方法

    公开(公告)号:US06468384B1

    公开(公告)日:2002-10-22

    申请号:US09710083

    申请日:2000-11-09

    IPC分类号: C23F100

    摘要: The present invention provides plasma processing systems and methods for providing a set-point temperature for substrates during plasma processing by controlling clamping force or RF power. The plasma processing system includes a plasma chamber, a controller, and an electrostatic power supply. The plasma chamber is arranged to receive an RF power and a source gas for producing plasma. The plasma chamber includes an electrostatic chuck for clamping a substrate in place during plasma processing. The electrostatic chuck includes an electrode and a sensor, which is arranged to monitor temperature of the substrate being processed. The controller is coupled to the sensor to receive the substrate temperature and is configured to generate a control signal for driving the substrate temperature to the set-point temperature. The electrostatic power supply is coupled between the controller and the electrode in the electrostatic chuck. The electrostatic power supply receives the control signal from the controller and generates a voltage adapted to clamp the substrate with a clamping force. In this configuration, the electrostatic power supply provides the voltage to the electrode to clamp the substrate such that the substrate temperature is driven to the set-point temperature.

    摘要翻译: 本发明提供等离子体处理系统和方法,用于通过控制夹紧力或RF功率在等离子体处理期间提供基板的设定点温度。 等离子体处理系统包括等离子体室,控制器和静电电源。 等离子体室被布置成接收用于产生等离子体的RF功率和源气体。 等离子体室包括用于在等离子体处理期间将衬底夹持就位的静电吸盘。 静电卡盘包括电极和传感器,其被设置为监测被处理的基板的温度。 控制器耦合到传感器以接收衬底温度,并且被配置为产生用于将衬底温度驱动到设定点温度的控制信号。 静电电源连接在控制器和静电吸盘中的电极之间。 静电电源接收来自控制器的控制信号,并产生适合于用夹紧力夹紧衬底的电压。 在该结构中,静电电源向电极提供电压以夹紧基板,使得基板温度被驱动到设定点温度。