Hydrogen-activated thin film switching device
    1.
    发明授权
    Hydrogen-activated thin film switching device 失效
    氢激活薄膜切换装置

    公开(公告)号:US5635729A

    公开(公告)日:1997-06-03

    申请号:US646424

    申请日:1996-05-07

    摘要: A description is given of a switching device (1) comprising a transparent substrate (3), a reflective switching film (5) of yttrium having a thickness of 500 nm and a palladium layer (7) having a thickness of 5 nm. Using hydrogen gas at atmospheric pressure and at room temperature, a transparent, semiconductive film (5) of YH.sub.3 is formed, which is converted to a metallic mirror-like film (5) of YH.sub.2 by exposure to heat. The conversion of YH.sub.2 into YH.sub.3 is reversible and can for example be used in an optical switching element and in thin displays.

    摘要翻译: 给出了包括透明基板(3),厚度为500nm的钇的反射切换膜(5)和厚度为5nm的钯层(7)的开关装置(1)的描述。 在大气压和室温下使用氢气,形成透明的YH3半导体膜(5),通过曝光将其转化为YH2的金属镜像膜(5)。 YH2转化为YH3是可逆的,例如可用于光学开关元件和薄型显示器中。