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公开(公告)号：US5795819A
公开(公告)日：1998-08-18
申请号：US925655
申请日：1997-09-09
Applicant: William Thomas Motsiff , Robert Michael Geffken , Ronald Robert Uttecht
IPC: H01L23/525 , H01L29/40 , H01L23/48 , H01L23/52
CPC classification number: H01L23/5258 , H01L2924/0002
Abstract: A semiconductor interconnection consists of a corrosion resistant integrated fuse and Controlled, Collapse Chip Connection (C4) structure for the planar copper Back End of Line (BEOL). Non copper fuse material is directly connected to copper wiring.
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公开(公告)号：US06559046B1
公开(公告)日：2003-05-06
申请号：US08883427
申请日：1997-06-26
Applicant: Stephan Alan Cohen , Vincent James McGahay , Ronald Robert Uttecht
Inventor： Stephan Alan Cohen , Vincent James McGahay , Ronald Robert Uttecht
IPC: H01L214763
CPC classification number: H01L23/5329 , H01L21/76224 , H01L23/5222 , H01L2924/0002 , H01L2924/00
Abstract: An insulator for covering an interconnection wiring level in a surface thereof on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer and annealing. The annealing is carried out in the presence of hydrogen and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2. Also provided is electrical insulation between neighboring devices using the flowable oxide which is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum.
Abstract translation: 一种绝缘体，用于在包含通过固化可流动的氧化物层和退火而形成的半导体器件的半导体衬底上的表面中覆盖互连布线层。 在氢和铝的存在下进行退火以获得氧化物层的介电常数达到低于3.2。还提供了使用可固化和退火的可流动氧化物的相邻器件之间的电绝缘。 在这种情况下，退火可以在有或者没有铝的情况下在氢气中进行。
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公开(公告)号：US5731624A
公开(公告)日：1998-03-24
申请号：US671903
申请日：1996-06-28
Applicant: William Thomas Motsiff , Robert Michael Geffken , Ronald Robert Uttecht
IPC: H01L23/525 , H01L29/00 , H01L23/48 , H01L23/52 , H01L29/40
CPC classification number: H01L23/5258 , H01L2924/0002
Abstract: A semiconductor interconnection consists of a corrosion resistant integrated fuse and Controlled, Collapse Chip Connection (C4) structure for the planar copper Back End of Line (BEOL). Non copper fuse material is directly connected to copper wiring.
Abstract translation: 半导体互连由用于平面铜后端（BEOL）的耐腐蚀集成保险丝和受控塌陷芯片连接（C4）结构组成。 非铜保险丝材料直接连接到铜线。
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公开(公告)号：US5723898A
公开(公告)日：1998-03-03
申请号：US726543
申请日：1996-10-04
Applicant: Richard Alfred Gilmour , Thomas John Hartswick , David Charles Thomas , Ronald Robert Uttecht , Erick Gregory Walton
Inventor： Richard Alfred Gilmour , Thomas John Hartswick , David Charles Thomas , Ronald Robert Uttecht , Erick Gregory Walton
CPC classification number: H01L23/62 , H01L2924/0002
Abstract: The present disclosure sets forth an improved integrated circuit in which circuit elements, adjacent to a fuse, are protected by barriers positioned adjacent the fuse. In the improved integrated circuit the barriers are non-frangible, high melting point structures buried in the passivating layer, covering a wiring layer containing a fuse, and are between the fuse and adjacent circuit elements in the wiring layer structures. Also taught is a method of protecting circuit elements adjacent a fuse comprising the steps of depositing an insulating layer on the surface of a semiconductor device having active regions therein, forming a plurality of fuses and circuit elements in said layer, coating said fuses and elements with a second insulating layer, patterning said second insulating layer to form grooves between each of said fuses and any adjacent fuse or circuit element, and depositing a high melting point and non-frangible material in said grooves.
Abstract translation: 本公开提出了一种改进的集成电路，其中与保险丝相邻的电路元件由位于保险丝附近的屏障保护。 在改进的集成电路中，阻挡层是非易碎的，高熔点结构掩埋在钝化层中，覆盖包含保险丝的布线层，并且位于布线层结构中的熔丝和相邻的电路元件之间。 还教导了一种保护靠近熔丝的电路元件的方法，包括以下步骤：在其中具有有源区的半导体器件的表面上沉积绝缘层，在所述层中形成多个保险丝和电路元件，将所述保险丝和元件涂覆 第二绝缘层，图案化所述第二绝缘层以在每个所述保险丝和任何相邻的熔丝或电路元件之间形成槽，以及在所述槽中沉积高熔点和非易碎材料。
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