公开(公告)号：US06504737B2

公开(公告)日：2003-01-07

申请号：US09875915

申请日：2001-06-08

申请人： Shin Nakajima ,  Hirohiko Miki ,  Sadami Kubota ,  Mutsuhito Sakaguchi

发明人： Shin Nakajima ,  Hirohiko Miki ,  Sadami Kubota ,  Mutsuhito Sakaguchi

IPC分类号： H02M542

CPC分类号： H01F1/15308 ,  H01F27/24 ,  H01F2029/143

摘要： A magnetic core for use in a saturable reactor made of an Fe-based soft-magnetic alloy comprising as essential alloying elements Fe, Cu and M, wherein M is at least one element selected from the group consisting of Nb, W, Ta, Zr, Hf, Ti and Mo, and having an alloy structure at least 50% in area ratio of which being fine crystalline particles having an average particle size of 100 nm or less. The magnetic core has control magnetizing properties of a residual operating magnetic flux density &Dgr;Bb of 0.12 T or less, a total control operating magnetic flux density &Dgr;Br of 2.0 T or more, and a total control gain Gr of 0.10-0.20 T/(A/m) calculated by the equation: Gr=0.8×(&Dgr;Br−&Dgr;Bb)/Hr, wherein Hr is a total control magnetizing force defined as a control magnetizing force corresponding to 0.8×(&Dgr;Br−&Dgr;Bb)+&Dgr;Bb.

摘要翻译： 一种用于由作为必需合金元素Fe，Cu和M的Fe基软磁合金制成的可饱和电抗器的磁芯，其中M为选自Nb，W，Ta，Zr中的至少一种元素 ，Hf，Ti和Mo，并且具有至少50％的面积比的合金结构，其是平均粒度为100nm以下的细晶粒。 磁芯具有0.12T或更小的剩余操作磁通密度DELTABb的控制磁化特性，2.0T或更大的总控制操作磁通密度DELTABr，总控制增益Gr为0.10-0.20T /（A / （DELTABr-DELTABb）/ Hr计算，其中Hr是被定义为对应于0.8x（DELTABr-DELTABb）+ DELTABb的控制磁化力的总控制磁化力。

公开(公告)号：US06270592B1

公开(公告)日：2001-08-07

申请号：US09159648

申请日：1998-09-24

申请人： Shin Nakajima ,  Hirohiko Miki ,  Sadami Kubota ,  Mutsuhito Sakaguchi

发明人： Shin Nakajima ,  Hirohiko Miki ,  Sadami Kubota ,  Mutsuhito Sakaguchi

IPC分类号： H01F114

CPC分类号： H01F1/15308 ,  H01F27/24 ,  H01F2029/143

摘要： A magnetic core for use in a saturable reactor made of an Fe-based soft-magnetic alloy comprising as essential alloying elements Fe, Cu and M, wherein M is at least one element selected from the group consisting of Nb, W, Ta, Zr, Hf, Ti and Mo, and having an alloy structure at least 50% in area ratio of which being fine crystalline particles having an average particle size of 100 nm or less. The magnetic core has control magnetizing properties of a residual operating magnetic flux density &Dgr;Bb of 0.12 T or less, a total control operating magnetic flux density &Dgr;Br of 2.0 T or more, and a total control gain Gr of 0.10-0.20 T/(A/m) calculated by the equation: Gr=0.8×(&Dgr;Br−&Dgr;Bb)/Hr, wherein Hr is a total control magnetizing force defined as a control magnetizing force corresponding to 0.8×(&Dgr;Br−&Dgr;Bb)+&Dgr;Bb.

摘要翻译： 一种用于由作为必需合金元素Fe，Cu和M的Fe基软磁合金制成的可饱和电抗器的磁芯，其中M为选自Nb，W，Ta，Zr中的至少一种元素 ，Hf，Ti和Mo，并且具有至少50％的面积比的合金结构，其是平均粒度为100nm以下的细晶粒。 磁芯具有0.12T或更小的剩余操作磁通密度DELTABb的控制磁化特性，2.0T或更大的总控制操作磁通密度DELTABr，总控制增益Gr为0.10-0.20T /（A / （DELTABr-DELTABb）/ Hr计算，其中Hr是被定义为对应于0.8x（DELTABr-DELTABb）+ DELTABb的控制磁化力的总控制磁化力。

公开(公告)号：US5053734A

公开(公告)日：1991-10-01

申请号：US497518

申请日：1990-03-22

申请人： Yasuhide Murakami ,  Shigeru Takeda ,  Kohei Ito ,  Yasuaki Kinoshita ,  Sadami Kubota

发明人： Yasuhide Murakami ,  Shigeru Takeda ,  Kohei Ito ,  Yasuaki Kinoshita ,  Sadami Kubota

IPC分类号： H01P1/215 ,  H01P5/02 ,  H01P7/00 ,  H03B5/18 ,  H03H2/00

CPC分类号： H03H2/001

摘要： A magnetostatic wave device comprises a magnetic thin film formed on a non-magnetic substrate, one or a plurality of electrode fingers and pad electrodes formed on the above described magnetic thin film, a magnetostatic wave resonator for exciting and propagating a magnetostatic wave within said magnetic thin film and for causing resonance, and a matching stub connected to at least one of the above described pad electrodes of the above described magnetostatic wave resonator to adjust the impedance of the magnetostatic wave device.

摘要翻译： 静磁波装置包括形成在非磁性基板上的磁性薄膜，形成在上述磁性薄膜上的一个或多个电极指和焊盘电极，用于激励和传播所述磁性体内的静磁波的静磁波谐振器 并且用于引起共振，以及连接到上述静磁波谐振器的上述焊盘电极中的至少一个的匹配短截线，以调整静磁波器件的阻抗。

公开(公告)号：US4992760A

公开(公告)日：1991-02-12

申请号：US274246

申请日：1988-11-21

申请人： Shigeru Takeda ,  Kohei Ito ,  Yasuaki Kinoshita ,  Sadami Kubota

发明人： Shigeru Takeda ,  Kohei Ito ,  Yasuaki Kinoshita ,  Sadami Kubota

IPC分类号： H03H2/00

CPC分类号： H03H2/001

摘要： A chip for a magnetostatic wave device comprising; a base substrate consisting of a dielectric monocrystalline base plate and a ferrimagnetic monocrystalline film formed on the base plate; an excitation means for magnetostatic waves formed on the ferrimagnetic film when it is given a bias magnetic field and high frequency electric signals; and a reflection means to reflect the excited magnetostatic wave toward the center portion of the film before it reaches at end portions of the ferrimagnetic film.

公开(公告)号：US4983937A

公开(公告)日：1991-01-08

申请号：US375483

申请日：1989-07-05

申请人： Yasuaki Kinoshita ,  Sadami Kubota ,  Shigeru Takeda

发明人： Yasuaki Kinoshita ,  Sadami Kubota ,  Shigeru Takeda

IPC分类号： H01L21/208 ,  G03C1/28 ,  H01P1/215 ,  H03H2/00 ,  H03H3/08 ,  H03H9/25

CPC分类号： H03H2/001 ,  G03C1/28

摘要： A magnetostatic wave band-pass-filter is disclosed which uses a planar structure, it has, a single crystal thin film formed on a single crystal gadolinium gallium garnet substrate and mainly containing yttrium iron garnet. In this band-pass-filter, input and output electrodes each made up of finger electrodes and pad electrodes are formed on the substrate or thin film, a high-frequency signal is applied to the input electrode, to excite a magnetostatic wave in the thin film, the magnetostatic wave is reflected from parallel straight edges of the thin film, to generate resonance, and a high-frequency current excited by the magnetostatic wave is taken out by the output electrode.

摘要翻译： 公开了一种使用平面结构的静磁波带通滤波器，它具有形成在单晶钆镓石榴石基底上并主要含有钇铁石榴石的单晶薄膜。 在该带通滤波器中，在基板或薄膜上形成各自由指状电极和焊盘电极构成的输入输出电极，向输入电极施加高频信号，以激励薄膜中的静磁波 静电波从薄膜的平行直边反射，产生谐振，由静电波激发的高频电流被输出电极取出。