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公开(公告)号：US07037736B2
公开(公告)日：2006-05-02
申请号：US10436921
申请日：2003-05-13
IPC分类号： H01L21/00
CPC分类号： B41J2/1603 , B41J2/14072 , B41J2/14129 , B41J2/1628 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2202/13 , H01L21/76816 , H01L21/823425 , H01L21/823437
摘要： The present invention includes as one embodiment a method for fabricating a portion of an ink-jet printhead made of a silicon substrate, the method including selectively etching active region contact vias of a field effect transistor that has a conducting channel that is insulated from a gate terminal by a layer of oxide along with separate substrate contact vias using a single mask and forming the substrate contact vias simultaneously with the active region contact vias during the selective etching.
摘要翻译： 本发明包括作为一个实施例的用于制造由硅衬底制成的喷墨打印头的一部分的方法，所述方法包括选择性地蚀刻具有与栅极绝缘的导电沟道的场效应晶体管的有源区接触通孔 通过一层氧化物以及使用单个掩模的单独的衬底接触孔，并且在选择性蚀刻期间与有源区接触通孔同时形成衬底接触孔。
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公开(公告)号：US07569404B2
公开(公告)日：2009-08-04
申请号：US11341101
申请日：2006-01-27
IPC分类号： H01L21/00
CPC分类号： B41J2/1603 , B41J2/14072 , B41J2/14129 , B41J2/1628 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2202/13 , H01L21/76816 , H01L21/823425 , H01L21/823437
摘要： A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.
摘要翻译： 在喷墨打印头制造中使用硅晶片衬底。 通过与衬底接触通孔同时形成MOSFET源极/漏极接触通孔来改进制造工艺。 使用具有至少10:1的氧化硅：硅蚀刻速率的干蚀刻。
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公开(公告)号：US07612859B2
公开(公告)日：2009-11-03
申请号：US11263525
申请日：2005-10-31
IPC分类号： G02F1/1339 , G02F1/1333
CPC分类号： G02F1/133377 , G02F1/1334 , G02F1/133617
摘要： Various embodiments and methods relating to an ultra-violet radiation absorbing grid for attenuating transmission of near UV-light are disclosed.
摘要翻译： 公开了与用于衰减近紫外光的透射的紫外辐射吸收栅相关的各种实施例和方法。
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公开(公告)号：US06582063B1
公开(公告)日：2003-06-24
申请号：US09814283
申请日：2001-03-21
IPC分类号： B41J205
CPC分类号： B41J2/1603 , B41J2/14072 , B41J2/14129 , B41J2/1628 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2202/13 , H01L21/76816 , H01L21/823425 , H01L21/823437
摘要： A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.
摘要翻译： 在喷墨打印头制造中使用硅晶片衬底。 通过与衬底接触通孔同时形成MOSFET源极/漏极接触通孔来改进制造工艺。 使用具有至少10:1的氧化硅：硅蚀刻速率的干蚀刻。
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