公开(公告)号：US06459153B1

公开(公告)日：2002-10-01

申请号：US09310875

申请日：1999-05-12

Applicant: Samit S. Sengupta

Inventor： Samit S. Sengupta

IPC: H01L2348

CPC classification number: H01L21/76838 ,  H01L23/53219 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A semiconductor device includes a substrate and a plurality of interconnect metallization lines defined over the substrate, each interconnect metallization line being provided with an electromigration-impeding composition including a percentage by weight of aluminum, a percentage by weight of copper, and a percentage by weight of zinc. The percentage by weight of zinc may be less than about 4 in solid solution in Al at 100 degrees C, which is a substantial increase in the Zn content over the about 0.5 weight percent of the Cu content in previously-used Al—Cu alloys. The percentage by weight of Zn may preferably range between about 1 and 2. The electromigration-impeding composition of the lines may include a structure of a solid solution of Al and Zn in the form of grains. The grains are bounded by grain boundaries. The structure further includes a precipitate of Al and Cu defined in the grain boundaries. Electromigration of the Al from the grain boundaries occurs and tends to cause the Al to electromigrate from the grains. The percentage by weight of Zn is selected to both define the solid solution with Al and to impede the electromigration of the Al from the grains. A method of making an interconnect metallization layer on a substrate includes depositing a metallization composition on the substrate, wherein the composition is the above-described composition.

Abstract translation: 半导体器件包括衬底和限定在衬底上的多个互连金属化线，每个互连金属化线设置有电迁移阻挡组合物，其包括铝的重量百分比，铜的重量百分比和重量百分比 的锌。 在100℃下，在铝的固溶体中锌的重量百分数可以小于约4，这是先前使用的Al-Cu合金中的Zn含量大大增加约0.5重量％的Cu含量。 Zn的重量百分比优选在约1和2之间。线的电迁移阻挡组合物可以包括晶粒形式的Al和Zn的固溶体的结构。 晶粒被晶界限制。 该结构还包括界定在晶界的Al和Cu的析出物。 发生Al从晶界的迁移，并且倾向于导致Al从晶粒中电迁移。 选择Zn的重量百分比来定义具有Al的固溶体并阻止Al从晶粒的电迁移。 在衬底上制造互连金属化层的方法包括在衬底上沉积金属化组合物，其中组合物是上述组成。

公开(公告)号：US6162586A

公开(公告)日：2000-12-19

申请号：US73734

申请日：1998-05-06

Applicant: Samit S. Sengupta ,  Daniel C. Baker ,  Subhas Bothra

Inventor： Samit S. Sengupta ,  Daniel C. Baker ,  Subhas Bothra

IPC: G03F7/09 ,  H01L21/3213 ,  G03C5/00

CPC classification number: G03F7/091 ,  H01L21/32139

Abstract: Disclosed is a method for making a metallization layered stack over an oxide layer of a semiconductor substrate, and a metallization layered stack that assists in providing superior deep UV photolithography resolution. The method includes forming a bottom titanium nitride layer over the oxide layer, and forming an aluminum metallization layer over the bottom titanium nitride layer. The method further includes forming a top titanium nitride layer over the aluminum metallization layer, such that the forming of the top titanium nitride layer includes: (a) placing the semiconductor substrate in an ionized metal plasma chamber having an RF powered coil and a titanium target; (b) introducing an argon gas and a nitrogen gas into the ionized metal plasma chamber; (c) pressuring up the ionized metal plasma chamber to a pressure of between about 10 mTorr and about 50 mTorr, whereby the top titanium nitride layer is formed as a dense titanium nitride film.

Abstract translation: 公开了一种用于在半导体衬底的氧化物层上形成金属化层叠叠层的方法，以及有助于提供优异的深紫外光刻分辨率的金属化层叠叠层。 该方法包括在氧化物层上形成底部氮化钛层，并在底部氮化钛层上形成铝金属化层。 该方法还包括在铝金属化层上形成顶部氮化钛层，使得顶部氮化钛层的形成包括：（a）将半导体衬底放置在具有RF供电线圈和钛靶的电离金属等离子体室中 ; （b）将氩气和氮气引入离子化金属等离子体室中; （c）将离子化金属等离子体室加压到约10mTorr至约50mTorr之间的压力，由此顶部氮化钛层形成为致密的氮化钛膜。