公开(公告)号：US20090189210A1

公开(公告)日：2009-07-30

申请号：US12416651

申请日：2009-04-01

Applicant: Yong-Suk Choi ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Scung-Jin Yang ,  Ilyok-Ki Kwon

Inventor： Yong-Suk Choi ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Scung-Jin Yang ,  Ilyok-Ki Kwon

IPC: H01L29/788

CPC classification number: H01L29/7881 ,  H01L29/40114 ,  H01L29/42336

Abstract: A semiconductor flash memory device. The flash memory device includes a floating gate electrode disposed in a recess having slanted sides in a semiconductor substrate. A gate insulation film is interposed between the floating gate electrode and the semiconductor substrate. A control gate electrode is disposed over the floating gate electrode. The floating gate electrode includes projections adjacent to the slanted sides of the recess.

Abstract translation: 半导体闪存器件。 闪存器件包括设置在具有在半导体衬底中的倾斜侧面的凹部中的浮栅电极。 栅极绝缘膜介于浮栅电极和半导体衬底之间。 控制栅电极设置在浮栅电极上。 浮栅电极包括与凹部的倾斜侧相邻的突起。