METHOD OF PLANARIZING SPIN-ON MATERIAL LAYER
AND MANUFACTURING PHOTORESIST LAYER
    1.
    发明申请
    METHOD OF PLANARIZING SPIN-ON MATERIAL LAYER AND MANUFACTURING PHOTORESIST LAYER 有权
    旋转材料层平面化方法

    公开(公告)号:US20050196879A1

    公开(公告)日:2005-09-08

    申请号:US10711379

    申请日:2004-09-15

    Abstract: A method of planarizing a spin-on material layer is provided. A substrate having a plurality of openings thereon is provided. A spin-on material layer is formed on the substrate such that the openings are completely filled. A plasma etching process is carried out to remove a portion of the spin-on material layer and expose the substrate surface. During the plasma etching process, the substrate is cooled to maintain an etching selectivity between the spin-on material layer on the substrate surface and the spin-on material layer within the openings so that a planar spin-on material layer is ultimately obtained.

    Abstract translation: 提供了一种平面化旋涂材料层的方法。 提供其上具有多个开口的基板。 在基板上形成旋涂材料层,使得开口被完全填充。 进行等离子体蚀刻工艺以去除旋涂材料层的一部分并暴露衬底表面。 在等离子体蚀刻工艺期间,冷却基板以保持基板表面上的旋涂材料层和开口内的旋涂材料层之间的蚀刻选择性,从而最终获得平面旋涂材料层。

    METHOD OF RECOGNIZING WAVEFORMS AND DYNAMIC FAULT DETECTION METHOD USING THE SAME
    2.
    发明申请
    METHOD OF RECOGNIZING WAVEFORMS AND DYNAMIC FAULT DETECTION METHOD USING THE SAME 审中-公开
    识别波形的方法和使用该方法的动态故障检测方法

    公开(公告)号:US20080231636A1

    公开(公告)日:2008-09-25

    申请号:US11747159

    申请日:2007-05-10

    CPC classification number: G05B23/0229

    Abstract: A dynamic fault detection method comprises the steps of acquiring a data curve from a machine, performing a waveform-recognition process to check if the data curve includes an effective waveform, performing a data-diagnosing process to check if the value of the effective waveform in an effective region falls outside a predetermined range, and generating an alarm signal if the value of the effective waveform in the effective region falls outside the predetermined range. The waveform-recognition process comprises the steps of checking if the data curve includes a first segment, a second segment and a third segment sandwiched between the first segment and the second segment, and checking if the length of the third segment is larger than a predetermined value. The waveform is determined to include the effective waveform if the checking results are true.

    Abstract translation: 动态故障检测方法包括以下步骤:从机器获取数据曲线,执行波形识别处理以检查数据曲线是否包括有效波形,执行数据诊断处理以检查有效波形的值是否在 有效区域落在预定范围之外,并且如果有效区域中的有效波形的值落在预定范围之外,则产生报警信号。 波形识别处理包括以下步骤:检查数据曲线是否包括第一段,第二段和夹在第一段与第二段之间的第三段,以及检查第三段的长度是否大于预定的 值。 如果检查结果为真,则波形被确定为包括有效波形。

    SYSTEM FOR DETECTING PLASMA REACTION AND METHOD FOR USING THE SAME
    3.
    发明申请
    SYSTEM FOR DETECTING PLASMA REACTION AND METHOD FOR USING THE SAME 审中-公开
    用于检测等离子体反应的系统及其使用方法

    公开(公告)号:US20080223299A1

    公开(公告)日:2008-09-18

    申请号:US11839976

    申请日:2007-08-16

    CPC classification number: H05H1/0012 H01J37/32935

    Abstract: A system for detecting a plasma reaction and a method for using the same are provided. When the plasma reaction changes its reaction power, a lightness variation accompanies the power change. The system comprises a sensing device with a resistance that the resistance of the sensing device will be changed in response to the lightness variation; thereby the system can detect the status of the plasma reaction.

    Abstract translation: 提供了一种用于检测等离子体反应的系统及其使用方法。 当等离子体反应改变其反作用力时,伴随着功率变化的亮度变化。 该系统包括具有电阻的感测装置,该感测装置的电阻将响应于亮度变化而改变; 从而系统可以检测等离子体反应的状态。

    Method of planarizing spin-on material layer and manufacturing photoresist layer
    4.
    发明授权
    Method of planarizing spin-on material layer and manufacturing photoresist layer 有权
    平面化旋涂材料层和制造光刻胶层的方法

    公开(公告)号:US06998277B2

    公开(公告)日:2006-02-14

    申请号:US10711379

    申请日:2004-09-15

    Abstract: A method of planarizing a spin-on material layer is provided. A substrate having a plurality of openings thereon is provided. A spin-on material layer is formed on the substrate such that the openings are completely filled. A plasma etching process is carried out to remove a portion of the spin-on material layer and expose the substrate surface. During the plasma etching process, the substrate is cooled to maintain an etching selectivity between the spin-on material layer on the substrate surface and the spin-on material layer within the openings so that a planar spin-on material layer is ultimately obtained.

    Abstract translation: 提供了一种平面化旋涂材料层的方法。 提供其上具有多个开口的基板。 在基板上形成旋涂材料层,使得开口被完全填充。 进行等离子体蚀刻工艺以去除旋涂材料层的一部分并暴露衬底表面。 在等离子体蚀刻工艺期间,冷却基板以保持基板表面上的旋涂材料层和开口内的旋涂材料层之间的蚀刻选择性,从而最终获得平面旋涂材料层。

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