Abstract:
A method of planarizing a spin-on material layer is provided. A substrate having a plurality of openings thereon is provided. A spin-on material layer is formed on the substrate such that the openings are completely filled. A plasma etching process is carried out to remove a portion of the spin-on material layer and expose the substrate surface. During the plasma etching process, the substrate is cooled to maintain an etching selectivity between the spin-on material layer on the substrate surface and the spin-on material layer within the openings so that a planar spin-on material layer is ultimately obtained.
Abstract:
A dynamic fault detection method comprises the steps of acquiring a data curve from a machine, performing a waveform-recognition process to check if the data curve includes an effective waveform, performing a data-diagnosing process to check if the value of the effective waveform in an effective region falls outside a predetermined range, and generating an alarm signal if the value of the effective waveform in the effective region falls outside the predetermined range. The waveform-recognition process comprises the steps of checking if the data curve includes a first segment, a second segment and a third segment sandwiched between the first segment and the second segment, and checking if the length of the third segment is larger than a predetermined value. The waveform is determined to include the effective waveform if the checking results are true.
Abstract:
A system for detecting a plasma reaction and a method for using the same are provided. When the plasma reaction changes its reaction power, a lightness variation accompanies the power change. The system comprises a sensing device with a resistance that the resistance of the sensing device will be changed in response to the lightness variation; thereby the system can detect the status of the plasma reaction.
Abstract:
A method of planarizing a spin-on material layer is provided. A substrate having a plurality of openings thereon is provided. A spin-on material layer is formed on the substrate such that the openings are completely filled. A plasma etching process is carried out to remove a portion of the spin-on material layer and expose the substrate surface. During the plasma etching process, the substrate is cooled to maintain an etching selectivity between the spin-on material layer on the substrate surface and the spin-on material layer within the openings so that a planar spin-on material layer is ultimately obtained.