公开(公告)号：US07705361B2

公开(公告)日：2010-04-27

申请号：US11808271

申请日：2007-06-07

Applicant: Sheng-Yu Wang ,  Jen-Inn Chyi ,  Shu-Han Cheng

Inventor： Sheng-Yu Wang ,  Jen-Inn Chyi ,  Shu-Han Cheng

IPC: H01L3/256

CPC classification number: H01L29/7371 ,  H01L29/201 ,  H01L29/205

Abstract: A heterojunction bipolar transistor (HBT) has a (In)(Al)GaAsSb/InGaAs base-collector structure. A discontinuous base-collector conduction band forms a built-in electric field to infuse electrons into a collector structure effectively, while a discontinuous base-collector valence band prevents holes from spreading into the collector structure at the same time. Thus, a current density is increased. In addition, the small offset voltage of the base-emitter and base-collector junctions reduce a power consumption.

Abstract translation: 异质结双极晶体管（HBT）具有（In）（Al）GaAsSb / InGaAs基极集电器结构。 不连续的基极集电极导带形成内置的电场，以有效地将电子注入集电极结构，而不连续的基极集电极价带同时防止空穴扩散到集电极结构。 因此，电流密度增加。 此外，基极 - 基极 - 集电极结的小偏移电压降低功耗。