公开(公告)号：US20070278424A1

公开(公告)日：2007-12-06

申请号：US11421590

申请日：2006-06-01

申请人： Chin-Hsiang LIN ,  Jui-Chung PENG ,  Yung-Cheng CHEN ,  Shy-Jan LIN

发明人： Chin-Hsiang LIN ,  Jui-Chung PENG ,  Yung-Cheng CHEN ,  Shy-Jan LIN

IPC分类号： G03F7/20

CPC分类号： G03F7/70991 ,  G03F7/70466

摘要： The present disclosure provides a lithography apparatus with improved lithography throughput. The lithography apparatus includes a first lens system; a first substrate stage configured to receive a first radiation energy from the first lens system, and designed operable to move a substrate during an exposing process; a second lens system, having a higher resolution than that of the first lens system; and a second substrate stage approximate to the first substrate stage and configured to receive a second radiation energy from the second lens system, and designed operable to receive the substrate from the first substrate stage and move the substrate.

摘要翻译： 本公开提供了具有改进的光刻产量的光刻设备。 光刻设备包括第一透镜系统; 第一衬底台，被配置为从所述第一透镜系统接收第一辐射能量，并且被设计为可操作以在曝光过程期间移动衬底; 第二透镜系统，具有比第一透镜系统更高的分辨率; 以及第二衬底台，其近似于所述第一衬底台并且被配置为从所述第二透镜系统接收第二辐射能量，并且被设计为可操作以从所述第一衬底台接收所述衬底并移动所述衬底。