公开(公告)号：US06714374B1

公开(公告)日：2004-03-30

申请号：US09652821

申请日：2000-08-31

申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Stuart Solin ,  Tao Zhou

发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Stuart Solin ,  Tao Zhou

IPC分类号： G11B503

CPC分类号： G11B5/3993 ,  G01R33/09 ,  G11B5/00 ,  G11B5/378 ,  G11B2005/0008 ,  G11B2005/0016 ,  H01L43/08

摘要： A magnetoresistive sensor includes a magnetoresistive element and equipment which generates a magnetic field in the magnetoresistive element thereby inducing a biasing magnetic field in the element, where the magnetoresistive element comprises a high electron mobility semiconductor and electrodes which are connected to the semiconductor. If it is an insulator, the equipment, which generates the biasing magnetic field and supplies it to the magnetoresistive element, may contact directly to the magnetoresistive element. If it is a conductor, an insulating separation layer must be set between the equipment and the element. A magnetoresistive element is representatively Corbino disk type or a bar type magnetoresistive element. Another candidate of the magnetoresistive element is an element consisting of a high electron mobility semiconductor, a pair of electrodes which make a current path in the high electron mobility semiconductor, and another pair of electrodes to detect the induced voltage by the current.

摘要翻译： 磁阻传感器包括磁阻元件和在磁阻元件中产生磁场的设备，从而在元件中产生偏置磁场，其中磁阻元件包括高电子迁移率半导体和连接到半导体的电极。 如果它是绝缘体，则产生偏置磁场并将其提供给磁阻元件的设备可以直接接触磁阻元件。 如果是导体，必须在设备和元件之间设置绝缘分离层。 磁阻元件是代表性的Corbino盘型或棒式磁阻元件。 磁阻元件的另一个候选物是由高电子迁移率半导体，在高电子迁移率半导体中形成电流路径的一对电极以及用电流检测感应电压的另一对电极组成的元件。