公开(公告)号：US06713362B1

公开(公告)日：2004-03-30

申请号：US10330241

申请日：2002-12-30

申请人： Chih-Hung Chen ,  Sung-Dtr Wu

发明人： Chih-Hung Chen ,  Sung-Dtr Wu

IPC分类号： H01L2702

CPC分类号： H01L27/11 ,  H01L27/1112 ,  H01L28/20

摘要： The present invention relates to a method for forming a non-salicide p+ polysilicon resistor used to replace a N-well resistor. In the low power SRAM process whose window is lower than 0.15 &mgr;m, it is found that non-salicide p+ polysilicon resistor has minor temperature dependence and also has layout benefit. In addition, the non-salicide p+ polysilicon resistor is decreased at high temperature. Therefore, it is good benefit to reduce the RC timing delay, which would compensate the inherent MOS mobility deceleration at high temperature, when the non-salicide p+ polysilicon resistor of the present invention is used to replace the N-well resistor.

摘要翻译： 本发明涉及一种形成用于替代N阱电阻器的非硅化物p +多晶硅电阻器的方法。 在窗口低于0.15μm的低功率SRAM工艺中，发现非硅化物p +多晶硅电阻器具有较小的温度依赖性，并且还具有布局优势。 另外，非硅化物p +多晶硅电阻在高温下降低。 因此，当使用本发明的非硅化物p +多晶硅电阻器来替代N阱电阻器时，减小RC定时延迟是很有好处的，这将补偿高温下固有的MOS迁移率减小。