公开(公告)号：US4849799A

公开(公告)日：1989-07-18

申请号：US897378

申请日：1986-08-18

申请人： Federico Capasso ,  Harry T. French ,  Arthur C. Gossard ,  Albert L. Hutchinson ,  Richard A. Kiehl ,  Sustana Sen

发明人： Federico Capasso ,  Harry T. French ,  Arthur C. Gossard ,  Albert L. Hutchinson ,  Richard A. Kiehl ,  Sustana Sen

IPC分类号： H01L29/73 ,  H01L29/737

CPC分类号： B82Y10/00 ,  H01L29/7311 ,  H01L29/7376

摘要： A resonant-tunneling, heterostructure bipolar transistor having a quantum well between emitter contact and collector region is described. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, and there is a double barrier in the base region. In another embodiment the quantum well is defined by the emitter and a potential barrier in the base region. Further embodiments have a quantum well between emitter and collector regions or else within the emitter region.

摘要翻译： 描述了在发射极接触和集电极区域之间具有量子阱的共振隧穿，异质结双极晶体管。 在一个实施例中，发射极区域的组成渐变部分与基极区域相邻，并且在基极区域中存在双重屏障。 在另一个实施例中，量子阱由基极区域中的发射极和势垒限定。 另外的实施例在发射极和集电极区之间或在发射极区内具有量子阱。