公开(公告)号：US07214627B2

公开(公告)日：2007-05-08

申请号：US11201066

申请日：2005-08-09

申请人： J. Neil Merrett ,  Tamara Isaacs-Smith ,  David C. Sheridan ,  John R. Williams

发明人： J. Neil Merrett ,  Tamara Isaacs-Smith ,  David C. Sheridan ,  John R. Williams

IPC分类号： H01L21/302

CPC分类号： H01L29/0615 ,  H01L21/0465 ,  H01L29/1608 ,  Y10S438/931

摘要： A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

摘要翻译： 碳化硅（SiC）半导体器件中的分级结端接延伸及其使用离子实现技术制造的方法被提供用于高功率器件。 碳化硅（SiC）的性质使这种宽带隙半导体成为高功率器件的有前景的材料。 这种电位在诸如p-n二极管，肖特基二极管，双极结型晶体管，晶闸管等的各种器件中得以证明。这些器件需要足够且经济的端接技术来减少泄漏电流并增加击穿电压，以最大化功率处理能力。 公开的分级连接终止扩展是有效的，自对齐的，并且简化了实现过程。

公开(公告)号：US20060172543A1

公开(公告)日：2006-08-03

申请号：US11201066

申请日：2005-08-09

申请人： J. Merrett ,  Tamara Isaacs-Smith ,  David Sheridan ,  John Williams

发明人： J. Merrett ,  Tamara Isaacs-Smith ,  David Sheridan ,  John Williams

IPC分类号： H01L21/302

CPC分类号： H01L29/0615 ,  H01L21/0465 ,  H01L29/1608 ,  Y10S438/931

摘要： A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

公开(公告)号：US07033950B2

公开(公告)日：2006-04-25

申请号：US10324564

申请日：2002-12-19

申请人： J. Neil Merrett ,  Tamara Isaacs-Smith ,  David C. Sheridan ,  John R. Williams

发明人： J. Neil Merrett ,  Tamara Isaacs-Smith ,  David C. Sheridan ,  John R. Williams

IPC分类号： H01L21/302

CPC分类号： H01L29/0615 ,  H01L21/0465 ,  H01L29/1608 ,  Y10S438/931

摘要： A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.