Atmospheric pressure inductive plasma apparatus

    公开(公告)号:US20010008229A1

    公开(公告)日:2001-07-19

    申请号:US09768979

    申请日:2001-01-23

    发明人: Simon I. Selitser

    IPC分类号: B23K010/00

    CPC分类号: B23K10/003

    摘要: An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.