公开(公告)号：US08735904B2

公开(公告)日：2014-05-27

申请号：US13368662

申请日：2012-02-08

Applicant: Yi Chang ,  Chia-Hua Chang ,  Yueh-Chin Lin ,  Yu-Kong Chen ,  Ting-En Shie

Inventor： Yi Chang ,  Chia-Hua Chang ,  Yueh-Chin Lin ,  Yu-Kong Chen ,  Ting-En Shie

IPC: H01L29/15 ,  H01L21/336

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/452

Abstract: A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.

Abstract translation: 半导体器件包括由GaN基半导体材料制成的主体和至少一个电极结构。 电极结构包括形成在主体上的欧姆接触层，形成在与主体相反的欧姆接触层上的缓冲层，以及由铜基材料制成并形成的电路层 在与欧姆接触层相反的缓冲层上。 欧姆接触层由选自钛，铝，镍及其合金的材料制成。 缓冲层由不同于欧姆接触层材料的材料制成，选自钛，钨，氮化钛，氮化钨及其组合。

公开(公告)号：US20120313107A1

公开(公告)日：2012-12-13

申请号：US13368662

申请日：2012-02-08

Applicant: Yi CHANG ,  Chia-Hua CHANG ,  Yueh-Chin LIN ,  Yu-Kong CHEN ,  Ting-En SHIE

Inventor： Yi CHANG ,  Chia-Hua CHANG ,  Yueh-Chin LIN ,  Yu-Kong CHEN ,  Ting-En SHIE

IPC: H01L29/20

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/452

Abstract: A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.

Abstract translation: 半导体器件包括由GaN基半导体材料制成的主体和至少一个电极结构。 电极结构包括形成在主体上的欧姆接触层，形成在与主体相反的欧姆接触层上的缓冲层，以及由铜基材料制成并形成的电路层 在与欧姆接触层相反的缓冲层上。 欧姆接触层由选自钛，铝，镍及其合金的材料制成。 缓冲层由不同于欧姆接触层材料的材料制成，选自钛，钨，氮化钛，氮化钨及其组合。