公开(公告)号：US5161602A

公开(公告)日：1992-11-10

申请号：US736261

申请日：1991-07-22

Applicant: Shih-Chin Chang ,  Tsing-Shien Sheu

Inventor： Shih-Chin Chang ,  Tsing-Shien Sheu

IPC: C30B11/00

CPC classification number: C30B11/002

Abstract: A technique of preparing graphite molds for growing single crystals of active metals and alloys. The inner surfaces of the graphite molds in contact with the growing up single crystals are of passive graphite. Various types of single crystal selectors are available in the graphite molds.

Abstract translation: 制备用于生长活性金属和合金单晶的石墨模具的技术。 与生长的单晶接触的石墨模具的内表面是被动石墨。 在石墨模具中有各种类型的单晶选择器。