Method for fabricating passivated semiconductor devices
    1.
    发明授权
    Method for fabricating passivated semiconductor devices 有权
    钝化半导体器件的制造方法

    公开(公告)号:US06291316B1

    公开(公告)日:2001-09-18

    申请号:US09233706

    申请日:1999-01-19

    Abstract: A wafer-level process for fabricating a plurality of passivated semiconductor devices comprising the steps of providing a semiconductor wafer on that at least one p-n junction is formed, Cutting a plurality of grooves in said wafer to expose said at least one p-n junction, wherein each of said grooves extends partly through the wafer and has a depth that is enough to expose said at least one p-n junction, applying a passivating material into said grooves and curing the material. The grooves can be formed by using a disc saw having a blade, by performing a sandblasting operation within a controlled operation time, or by performing a photolithographically chemical etching process. The passivating material is either screen-printed or pin-dispensed into the grooves. A dicing operation can be subsequently proceeded to divide the wafer into individual chips for subsequent fabrication into completed semiconductor devices.

    Abstract translation: 一种用于制造多个钝化半导体器件的晶片级工艺,包括以下步骤:在该至少一个pn结上提供半导体晶片;在所述晶片中切割多个凹槽以暴露所述至少一个pn结,其中每个 所述凹槽部分地延伸穿过晶片并且具有足以露出所述至少一个pn结的深度,将钝化材料施加到所述凹槽中并固化材料。 可以通过使用具有叶片的盘锯,通过在受控的操作时间内进行喷砂操作,或通过进行光刻化学蚀刻工艺来形成凹槽。 钝化材料被丝网印刷或销钉分配到凹槽中。 随后可以进行切割操作以将晶片分成单个芯片,以便随后制造成完整的半导体器件。

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