公开(公告)号：US06284637B1

公开(公告)日：2001-09-04

申请号：US09280023

申请日：1999-03-29

申请人： Vijai Komar N. Chhagan ,  Yelehanka Machandramurthy Pradee ,  Mei Sheng Zhou ,  Henry Gerung

发明人： Vijai Komar N. Chhagan ,  Yelehanka Machandramurthy Pradee ,  Mei Sheng Zhou ,  Henry Gerung

IPC分类号： H01L218247

CPC分类号： H01L21/28273 ,  H01L29/7883

摘要： A method to fabricate a floating gate with a sloping sidewall for a Flash Memory is described. Field oxide isolation regions are provided in the substrate. A silicon oxide layer is provided overlying the isolation regions and the substrate. A first polysilicon layer is deposited overlying the silicon oxide layer. A photoresist layer is deposited overlying the first polysilicon layer. The photoresist layer is etched to remove sections of the photoresist as defined by photolithographic process. The photoresist layer, the first polysilicon layer, and the silicon oxide layer are etched in areas uncovered by the photoresist layer to create structures with sloping sidewall edges. The photoresist layer is etched away. An interpoly dielectric layer is deposited overlying the structures, the sloping sidewall edges, and the isolation regions. A second polysilicon layer is deposited overlying the interpoly dielectric and the fabrication of the integrated circuit device is completed.

摘要翻译： 描述了一种用于制造具有用于闪存的倾斜侧壁的浮动栅极的方法。 在衬底中提供场氧化物隔离区。 提供覆盖隔离区域和衬底的氧化硅层。 沉积在氧化硅层上的第一多晶硅层。 沉积在第一多晶硅层上的光致抗蚀剂层。 蚀刻光致抗蚀剂层以除去由光刻工艺定义的光致抗蚀剂部分。 光刻胶层，第一多晶硅层和氧化硅层被蚀刻在未被光致抗蚀剂层覆盖的区域中，以产生具有倾斜侧壁边缘的结构。 蚀刻掉光致抗蚀剂层。 叠层介质层沉积在结构上，倾斜的侧壁边缘和隔离区域上。 第二多晶硅层沉积在叠层电介质上，并且完成了集成电路器件的制造。