公开(公告)号：US20120235151A1

公开(公告)日：2012-09-20

申请号：US13048342

申请日：2011-03-15

申请人： Jin Cai ,  Kevin K. Chan ,  Wilfried W. Haensch ,  Tak H. Ning

发明人： Jin Cai ,  Kevin K. Chan ,  Wilfried W. Haensch ,  Tak H. Ning

IPC分类号： H01L29/737 ,  H01L21/331

CPC分类号： H01L29/737 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/66242 ,  H01L29/66265

摘要： A horizontal heterojunction bipolar transistor (HBT) includes doped single crystalline Ge having a doping of the first conductivity type as the base having an energy bandgap of about 0.66 eV, and doped polysilicon having a doping of a second conductivity type as a wide-gap-emitter having an energy bandgap of about 1.12 eV. In one embodiment, doped polysilicon having a doping of the second conductivity type is employed as the collector. In other embodiments, a single crystalline Ge having a doping of the second conductivity type is employed as the collector. In such embodiments, because the base and the collector include the same semiconductor material, i.e., Ge, having the same lattice constant, there is no lattice mismatch issue between the collector and the base. In both embodiments, because the emitter is polycrystalline and the base is single crystalline, there is no lattice mismatch issue between the base and the emitter.

摘要翻译： 水平异质结双极晶体管（HBT）包括具有第一导电类型的掺杂的掺杂单晶Ge作为具有约0.66eV的能带隙的基极，以及掺杂有第二导电类型的掺杂多晶硅作为宽间隙 - 发射体具有约1.12eV的能带隙。 在一个实施例中，采用具有第二导电类型掺杂的掺杂多晶硅作为集电极。 在其它实施例中，采用具有第二导电类型掺杂的单晶Ge作为集电极。 在这样的实施例中，由于基极和集电极包括具有相同晶格常数的相同的半导体材料即Ge，所以在集电极和基极之间不存在晶格失配问题。 在两个实施例中，由于发射极是多晶的并且基极是单晶的，所以在基极和发射极之间不存在晶格失配问题。