Photomask and method for manufacturing the photomask
    1.
    发明授权
    Photomask and method for manufacturing the photomask 失效
    光掩模和制造光掩模的方法

    公开(公告)号:US06911284B2

    公开(公告)日:2005-06-28

    申请号:US10273759

    申请日:2002-10-18

    IPC分类号: G03F1/00 G01F9/00

    CPC分类号: G03F1/68 G03F1/44

    摘要: A photomask for the manufacture of integrated semiconductor products has at least one first region with principal structures that correspond to structures on the integrated semiconductor structure to be manufactured and has at least one second region differing from the first region and having calibration structures which comprise at least two different, pre-defined expanses. The calibration structures contain pre-programmed flaws with predetermined sizes that are positioned on the photomask so that they do not negatively influence the functionality of the photomask. These calibration structures are then co-measured in a normal inspection, and the measured results can be subsequently normed to the detection of the calibration structures.

    摘要翻译: 用于制造集成半导体产品的光掩模具有至少一个第一区域,主要结构对应于要制造的集成半导体结构上的结构,并且具有与第一区域不同的至少一个第二区域,并且具有包括至少 两个不同的预定义的扩展。 校准结构包含预定的瑕疵,其预定尺寸位于光掩模上,使得它们不会对光掩模的功能产生负面影响。 然后在正常检查中共同测量这些校准结构,随后可以将测量结果标准化为校准结构的检测。