公开(公告)号：US07545075B2

公开(公告)日：2009-06-09

申请号：US11144184

申请日：2005-06-04

Applicant: Yongli Huang ,  Xuefeng Zhuang ,  Butrus T. Khuri-Yakub ,  Ching-Hsiang Cheng ,  Arif S. Ergun

Inventor： Yongli Huang ,  Xuefeng Zhuang ,  Butrus T. Khuri-Yakub ,  Ching-Hsiang Cheng ,  Arif S. Ergun

IPC: H02N1/00 ,  H04R19/00

CPC classification number: B06B1/0292

Abstract: The embodiments of the present invention provide a CMUT array and method of fabricating the same. The CMUT array has CMUT elements individually or respectively addressable from a backside of a substrate on which the CMUT array is fabricated. In one embodiment, a CMUT array is formed on a front side of a very high conductivity silicon substrate. Through wafer trenches are etched into the substrate from the backside of the substrate to electrically isolate individual CMUT elements formed on the front side of the substrate. Electrodes are formed on the backside of the substrate to individually address the CMUT elements through the substrate.

Abstract translation: 本发明的实施例提供了一种CMUT阵列及其制造方法。 CMUT阵列具有单独地或分别可从其上制造CMUT阵列的衬底的背面寻址的CMUT元件。 在一个实施例中，CMUT阵列形成在非常高导电性的硅衬底的正面上。 通过晶片沟槽从衬底的背面蚀刻到衬底中以电隔离形成在衬底前侧上的各个CMUT元件。 电极形成在衬底的背面，以通过衬底单独地寻址CMUT元件。

公开(公告)号：US07741686B2

公开(公告)日：2010-06-22

申请号：US11880459

申请日：2007-07-20

Applicant: Butrus T. Khuri-Yakub ,  Xuefeng Zhuang ,  Arif Sanli Ergun

Inventor： Butrus T. Khuri-Yakub ,  Xuefeng Zhuang ,  Arif Sanli Ergun

IPC: H01L29/93

CPC classification number: H01L27/1203 ,  B06B1/0292

Abstract: A one or two-dimensional capacitive micro-machined ultrasonic transducer (CMUT) array with supporting frame is provided. The CMUT array has at least three array elements deposited on a conductive substrate. The invention also has at least one CMUT cell in the array element, a conductive top layer deposited to a top side of the element, and a conductive via disposed within the elements. The via is isolated from the conductive top layer and conducts with the substrate. There are at least two isolation trenches in the conductive substrate, and the trenches are disposed between adjacent vias to conductively isolating the vias. A substrate region between the trenches forms a mechanical support frame. At least one conductive electrode is deposited to a bottom surface of the conductive substrate, where the electrode conducts with the via. The support frame eliminates the need for a carrier wafer in the process steps.

Abstract translation: 提供具有支撑框架的一维或二维电容微加工超声波换能器（CMUT）阵列。 CMUT阵列具有沉积在导电衬底上的至少三个阵列元件。 本发明还具有阵列元件中的至少一个CMUT单元，沉积到元件的顶侧的导电顶层和设置在元件内的导电通孔。 通孔与导电顶层隔离并与衬底导通。 在导电衬底中存在至少两个隔离沟槽，并且沟槽被布置在相邻的通孔之间以导电隔离通孔。 沟槽之间的衬底区域形成机械支撑框架。 至少一个导电电极沉积到导电基底的底表面上，其中电极与通孔导通。 支撑框架消除了在工艺步骤中对载体晶片的需要。

公开(公告)号：US20060075818A1

公开(公告)日：2006-04-13

申请号：US11144184

申请日：2005-06-04

Applicant: Yongli Huang ,  Xuefeng Zhuang ,  Butrus Khuri-Yakub ,  Ching-Hsiang Cheng ,  Arif Ergun

Inventor： Yongli Huang ,  Xuefeng Zhuang ,  Butrus Khuri-Yakub ,  Ching-Hsiang Cheng ,  Arif Ergun

IPC: G01H11/00

CPC classification number: B06B1/0292

Abstract: The embodiments of the present invention provide a CMUT array and method of fabricating the same. The CMUT array has CMUT elements individually or respectively addressable from a backside of a substrate on which the CMUT array is fabricated. In one embodiment, a CMUT array is formed on a front side of a very high conductivity silicon substrate. Through wafer trenches are etched into the substrate from the backside of the substrate to electrically isolate individual CMUT elements formed on the front side of the substrate. Electrodes are formed on the backside of the substrate to individually address the CMUT elements through the substrate.

公开(公告)号：US20080048211A1

公开(公告)日：2008-02-28

申请号：US11880459

申请日：2007-07-20

Applicant: Butrus Khuri-Yakub ,  Xuefeng Zhuang ,  Arif Ergun

Inventor： Butrus Khuri-Yakub ,  Xuefeng Zhuang ,  Arif Ergun

IPC: H01L27/10 ,  H01L21/00

CPC classification number: H01L27/1203 ,  B06B1/0292

Abstract: A one or two-dimensional capacitive micro-machined ultrasonic transducer (CMUT) array with supporting frame is provided. The CMUT array has at least three array elements deposited on a conductive substrate. The invention also has at least one CMUT cell in the array element, a conductive top layer deposited to a top side of the element, and a conductive via disposed within the elements. The via is isolated from the conductive top layer and conducts with the substrate. There are at least two isolation trenches in the conductive substrate, and the trenches are disposed between adjacent vias to conductively isolating the vias. A substrate region between the trenches forms a mechanical support frame. At least one conductive electrode is deposited to a bottom surface of the conductive substrate, where the electrode conducts with the via. The support frame eliminates the need for a carrier wafer in the process steps.

Abstract translation: 提供具有支撑框架的一维或二维电容微加工超声波换能器（CMUT）阵列。 CMUT阵列具有沉积在导电衬底上的至少三个阵列元件。 本发明还具有阵列元件中的至少一个CMUT单元，沉积到元件的顶侧的导电顶层和设置在元件内的导电通孔。 通孔与导电顶层隔离并与衬底导通。 在导电衬底中存在至少两个隔离沟槽，并且沟槽被布置在相邻的通孔之间以导电隔离通孔。 沟槽之间的衬底区域形成机械支撑框架。 至少一个导电电极沉积到导电基底的底表面上，其中电极与通孔导通。 支撑框架消除了在工艺步骤中对载体晶片的需要。