公开(公告)号：US06804141B1

公开(公告)日：2004-10-12

申请号：US10442360

申请日：2003-05-20

申请人： Juergen T. Rickes ,  Yacoub Mustafa ,  Hugh P. McAdams

发明人： Juergen T. Rickes ,  Yacoub Mustafa ,  Hugh P. McAdams

IPC分类号： G11C1112

CPC分类号： G11C11/22 ,  G11C2207/2254

摘要： A FeRAM includes a reference voltage calibration circuit that evaluates FeRAM cells and selects reference voltages for reading the FeRAM cells. Calibration of the reference voltage can be performed dynamically during normal operation of the FeRAM so that the reference voltage tracks changes in FeRAM cell performance that may be associated with temperature or aging effects. Dynamic calibration during normal use eliminates the need for a reference voltage calibration process during manufacture of the memory. The calibration circuit can further be connected to redundancy circuitry that replaces FeRAM cells that the calibration circuit determines are weak.

摘要翻译： FeRAM包括评估FeRAM单元并选择用于读取FeRAM单元的参考电压的参考电压校准电路。 参考电压的校准可以在FeRAM的正常操作期间动态执行，以使参考电压跟踪可能与温度或老化影响相关的FeRAM单元性能的变化。 正常使用期间的动态校准消除了在存储器制造期间对参考电压校准过程的需要。 校准电路还可以连接到替代校准电路确定的FeRAM单元较弱的冗余电路。