公开(公告)号：US20080173945A1

公开(公告)日：2008-07-24

申请号：US11655896

申请日：2007-01-22

申请人： Yi-Hsun Wu ,  Yan-Chih Jiang ,  Yu-Chang Lin ,  Jian-Hsing Lee ,  Shih-Hsorng Shen ,  Yu-Ting Lin ,  Yun-Sheng Huang

发明人： Yi-Hsun Wu ,  Yan-Chih Jiang ,  Yu-Chang Lin ,  Jian-Hsing Lee ,  Shih-Hsorng Shen ,  Yu-Ting Lin ,  Yun-Sheng Huang

IPC分类号： H01L23/60 ,  H01L21/00

CPC分类号： H01L23/60 ,  H01L23/585 ,  H01L24/11 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device formed in a semiconductor substrate for dissipating electrostatic discharge and/or accumulated charge in an integrated circuit is provided. In one embodiment, the device comprises a semiconductor substrate; a plurality of layers of metal lines formed overlying the substrate; a plurality of via plugs through intermetal dielectric layers between the layers of metal lines and wherein the via plugs interconnect the metal lines; and a dummy pad formed over the plurality of layers of metal lines, the dummy pad having a diode connected thereto and to ground for providing a discharge path for the electrostatic discharge and/or accumulated charge.

摘要翻译： 提供了形成在用于在集成电路中消散静电放电和/或累积电荷的半导体衬底中的半导体器件。 在一个实施例中，该器件包括半导体衬底; 形成在衬底上的多层金属线; 多个通孔插塞穿过所述金属线层之间的金属间电介质层，并且其中所述通孔插塞互连金属线; 以及形成在所述多个金属线层上的虚拟焊盘，所述虚设焊盘具有连接到其上的二极管并接地以提供用于静电放电和/或累积电荷的放电路径。

公开(公告)号：US20080174923A1

公开(公告)日：2008-07-24

申请号：US11812221

申请日：2007-06-15

申请人： Yi-Hsun Wu ,  Yan-Chih Jiang ,  Yu-Chang Lin ,  Jian-Hsing Lee

发明人： Yi-Hsun Wu ,  Yan-Chih Jiang ,  Yu-Chang Lin ,  Jian-Hsing Lee

IPC分类号： H02H9/00 ,  H01L21/336

CPC分类号： H01L27/0255

摘要： A semiconductor device formed in a semiconductor substrate for dissipating electrostatic discharge and/or accumulated charge in an integrated circuit is provided. In one embodiment, the device comprises a semiconductor substrate; a plurality of layers of metal lines formed overlying the substrate; a plurality of via plugs through intermetal dielectric layers between the layers of metal lines and wherein the via plugs interconnect the metal lines; and a dummy pad formed over the plurality of layers of metal lines, the dummy pad having a diode connected thereto and to ground for providing a discharge path for the electrostatic discharge and/or accumulated charge.