公开(公告)号：US20100051335A1

公开(公告)日：2010-03-04

申请号：US12550758

申请日：2009-08-31

Applicant: Chien-Li Chen ,  Shun-Fa Feng ,  Yan-Lin Yeh

Inventor： Chien-Li Chen ,  Shun-Fa Feng ,  Yan-Lin Yeh

IPC: H05K1/11 ,  H05K1/09

CPC classification number: G02F1/1345

Abstract: A conducting layer jump connection structure used in a circuit device includes a substrate, a first conducting layer, a first insulating layer, a second conducting layer, a second insulating layer, a jump connection layer, a first via, and plural second vias. The first conducting layer covers the substrate. The first insulating layer covers the first conducting layer. The second conducting layer partially covers the first insulating layer. The second insulating layer covers the second conducting layer and the first insulating layer exposed by the second conducting layer. The jump connection layer covers the second insulating layer. The first via is formed on the first conducting layer and between two opposite second conducting portions of the second conducting layer. The first via penetrates through both the second insulating layer and the first insulating layer. The second vias are formed on the second conducting layer and penetrate through the second insulating layer. The first conducting layer and the second conducting layer are connected to the jump connection layer through the first via and the second vias, respectively.

Abstract translation: 在电路器件中使用的导电层跳变连接结构包括：衬底，第一导电层，第一绝缘层，第二导电层，第二绝缘层，跳跃连接层，第一通孔和多个第二通孔。 第一导电层覆盖基板。 第一绝缘层覆盖第一导电层。 第二导电层部分地覆盖第一绝缘层。 第二绝缘层覆盖由第二导电层露出的第二导电层和第一绝缘层。 跳跃连接层覆盖第二绝缘层。 第一通孔形成在第一导电层上，并形成在第二导电层的两个相对的第二导电部分之间。 第一通孔穿过第二绝缘层和第一绝缘层。 第二通孔形成在第二导电层上并穿透第二绝缘层。 第一导电层和第二导电层分别通过第一通孔和第二通孔连接到跳变连接层。