公开(公告)号：US5336365A

公开(公告)日：1994-08-09

申请号：US22634

申请日：1993-02-25

申请人： Hisashi Goda ,  Yasutoshi Asahina ,  Masayuki Hashimoto ,  Naoki Oka

发明人： Hisashi Goda ,  Yasutoshi Asahina ,  Masayuki Hashimoto ,  Naoki Oka

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/32137

摘要： A method of etching a polysilicon film specimen by an electronic cyclotron resonance etching technique or a microwave plasma etching technique includes the first process in which a mixed gas containing Cl.sub.2 and HBr is used as a process gas for etching, the Cl.sub.2 occupying 50-70 vol. % of the whole mixed gas; and the second process in which a mixed gas containing HBr and He is used, with HBr being in a proportion of 20-50 vol. % of the mixed gas, and a low bias voltage from -100 to -30 volts is applied to a specimen carrier. Further, in the first and second processes, a mixed gas containing HBr and He is used, with HBr being in a proportion of 20-50 vol. %, and a relatively high bias voltage from -250 to -100 volts is applied to the specimen carrier in the first process, while a low bias voltage from -100 to -30 volts is applied to the same in the second process. According to the present invention, a polysilicon film can be etched without causing undercut and with high dimensional accuracy.

摘要翻译： 通过电子回旋共振蚀刻技术或微波等离子体蚀刻技术蚀刻多晶硅膜试样的方法包括使用含有Cl 2和HBr的混合气体作为蚀刻处理气体的第一工序，Cl 2占据50〜70体积％ 。 全混合气的百分比; 使用含有HBr和He的混合气体的第二种方法，HBr为20-50体积％。 混合气体的比例以及-100〜-30伏特的低偏压被施加到试样载体上。 此外，在第一和第二工序中，使用含有HBr和He的混合气体，HBr为20〜50体积％。 ％，并且在第一工艺中将样品载体施加从-250到-100伏特的相对高的偏置电压，而在第二过程中将-100至-30伏特的低偏压施加到样品载体。 根据本发明，可以蚀刻多晶硅膜而不引起底切和高尺寸精度。