公开(公告)号：US5874342A

公开(公告)日：1999-02-23

申请号：US890222

申请日：1997-07-09

申请人： Jiunn-Yann Tsai ,  Zhihai Wang ,  Yen-Hui Joseph Ku

发明人： Jiunn-Yann Tsai ,  Zhihai Wang ,  Yen-Hui Joseph Ku

IPC分类号： H01L29/78 ,  H01L21/225 ,  H01L21/336

CPC分类号： H01L29/66575 ,  H01L21/2257 ,  H01L29/665

摘要： A process which is capable of forming shallow source/drain regions in a silicon substrate and a doped gate electrode by implantation of cobalt silicide contacts of uniform thickness previously formed on the substrate followed by diffusion of the dopant into the substrate to form the desired source/drain regions, and into the polysilicon gate electrode to provide the desired conductivity is described. The process comprises: first depositing a layer of cobalt over a polysilicon gate electrode and areas of a silicon substrate where source/drain regions will be formed; then forming at least one capping layer over the cobalt layer; then annealing the structure at a first temperature to form cobalt silicide; then removing the capping layer, as well as the unreacted cobalt and any cobalt reaction products other than cobalt silicide; then annealing the structure again at a higher temperature than the first anneal to form high temperature cobalt silicide; then implanting the cobalt silicide with one or more dopants suitable for forming source/drain regions in the silicon substrate and for increasing the conductivity of the polysilicon gate electrode; and then heating the structure sufficiently to cause the implanted dopant or dopants in the cobalt silicide to diffuse into the substrate to form the desired source/drain regions and into the polysilicon gate electrode to increase the conductivity thereof.

摘要翻译： 能够通过在衬底上注入预先形成均匀厚度的钴硅化物触点，然后将掺杂剂扩散到衬底中以形成所需的源极/漏极区域，从而在硅衬底和掺杂栅电极中形成浅源极/漏极区域的工艺， 漏极区域和多晶硅栅电极以提供期望的导电性。 该方法包括：首先在多晶硅栅极上沉积一层钴，并在其上形成源极/漏极区的硅衬底区域; 然后在所述钴层上形成至少一个覆盖层; 然后在第一温度下退火该结构以形成硅化钴; 然后除去覆盖层，以及未反应的钴和除了硅化钴之外的任何钴反应产物; 然后在比第一退火更高的温度下再次退火结构以形成高温钴硅酸盐; 然后用适合于在硅衬底中形成源/漏区的一种或多种掺杂剂注入硅化钴，并增加多晶硅栅电极的导电性; 然后充分加热该结构，使得硅化钴中的注入的掺杂剂或掺杂剂扩散到衬底中以形成所需的源极/漏极区并进入多晶硅栅电极以增加其导电性。