摘要:
Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm2) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.
摘要翻译:碱可显影的化学增幅抗蚀剂组合物,其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性化合物,其中所述被保护的碱溶性基团的保护部分含有与碳原子键合的脂环族烃基 其中R 1'是甲基,乙基,丙基或异丙基,并且所述碱溶性基团在与所述化合物组合使用的光致酸产生剂产生的酸作用下被切割,由此释放所述保护部分 从碱溶性基团中转化为碱溶性化合物,以及光致酸发生剂,其能够在暴露于图案化辐射时分解,从而产生能够导致所述保护部分裂解的酸。 抗蚀剂组合物可以表现出高灵敏度(不大于5mJ / cm 2),因此特别适用于ArF光刻,并且还可呈现稳定的图案化性能。
摘要:
Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm2) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.