Sample assembly for thermoelectric analyzer
    1.
    发明授权
    Sample assembly for thermoelectric analyzer 有权
    热电分析仪样品组装

    公开(公告)号:US06791335B2

    公开(公告)日:2004-09-14

    申请号:US09941879

    申请日:2001-08-29

    IPC分类号: G01N2500

    CPC分类号: G01N25/486

    摘要: In a sample assembly for a thermoelectric analyzer, typically TSC (Thermally Stimulated Current) analyzer, a sample is fixed to an electrically-insulating substrate via an adhesive layer. The material of the adhesive layer is indium or gold-tin alloy. The substrate has a pair of junction electrode layers formed thereon and a pair of electrode layers formed on the same plane of the sample. One of the electrode layers is connected with one of the junction electrode layers by electrically-conductive wire, while the other of the electrode layers is connected with the other of the junction electrode layers by another electrically-conductive wire. The substrate is made of preferably made of a highly electrically-insulating and highly thermally-conductive material which may be, for example, aluminum nitride (AlN), boron nitride (BN), beryllium oxide (BeO) or aluminum oxide (Al2O3). The sample may preferably be a compound semiconductor such as GaAs.

    摘要翻译: 在用于热电分析仪的样品组件(通常为TSC(热刺激电流))分析仪中,样品通过粘合剂层固定到电绝缘基底上。 粘合剂层的材料是铟或金 - 锡合金。 基板具有形成在其上的一对接电极层和形成在样品的同一平面上的一对电极层。 一个电极层通过导电线与一个接合电极层连接,而另一个电极层通过另一个导电线与另一个接合电极层连接。 基板由优选由高电绝缘性和高导热性材料制成,其可以是例如氮化铝(AlN),氮化硼(BN),氧化铍(BeO)或氧化铝(Al 2 O 3)。 样品可优选为化合物半导体,例如GaAs。