公开(公告)号：US07999187B2

公开(公告)日：2011-08-16

申请号：US12409350

申请日：2009-03-23

申请人： Yoshiyasu Isobe ,  Kunihiro Naoe

发明人： Yoshiyasu Isobe ,  Kunihiro Naoe

IPC分类号： H01B7/08

CPC分类号： H01B1/026 ,  Y10T428/12715

摘要： Disclosed is a plated flat conductor including a flat conductor of copper or a copper alloy and a plated layer formed on a surface of the flat conductor. The plated layer includes a first intermetallic compound layer of Cu3Sn disposed on the surface of the flat conductor, a second intermetallic compound layer of Cu6Sn5 formed on the first intermetallic compound, and a superficial layer formed on the second intermetallic compound layer. The superficial layer is plating material of pure tin or a tin alloy and has an average thickness from about 0.3 μm to 1.0 μm and a maximum thickness of about 1.0 μm or less. A volume ratio of the second intermetallic compound layer to the first intermetallic compound layer is about 1.5 or more.

摘要翻译： 公开了一种电镀扁平导体，其包括铜或铜合金的扁平导体和形成在扁平导体的表面上的镀层。 镀层包括设置在扁平导体表面上的Cu 3 Sn的第一金属间化合物层，形成在第一金属间化合物上的Cu 6 Sn 5的第二金属间化合物层和形成在第二金属间化合物层上的表面层。 表层是纯锡或锡合金的电镀材料，平均厚度为约0.3μm〜1.0μm，最大厚度为约1.0μm以下。 第二金属间化合物层与第一金属间化合物层的体积比为约1.5以上。

公开(公告)号：US20090236123A1

公开(公告)日：2009-09-24

申请号：US12409350

申请日：2009-03-23

申请人： Yoshiyasu Isobe ,  Kunihiro Naoe

发明人： Yoshiyasu Isobe ,  Kunihiro Naoe

IPC分类号： H01B7/08 ,  B32B15/01 ,  H01B1/00

CPC分类号： H01B1/026 ,  Y10T428/12715

摘要： Disclosed is a plated flat conductor including a flat conductor of copper or a copper alloy and a plated layer formed on a surface of the flat conductor. The plated layer includes a first intermetallic compound layer of Cu3Sn disposed on the surface of the flat conductor, a second intermetallic compound layer of Cu6Sn5 formed on the first intermetallic compound, and a superficial layer formed on the second intermetallic compound layer. The superficial layer is plating material of pure tin or a tin alloy and has an average thickness from about 0.3 μm to 1.0 μm and a maximum thickness of about 1.0 μm or less. A volume ratio of the second intermetallic compound layer to the first intermetallic compound layer is about 1.5 or more.

摘要翻译： 公开了一种电镀扁平导体，其包括铜或铜合金的扁平导体和形成在扁平导体的表面上的镀层。 镀层包括设置在扁平导体表面上的Cu 3 Sn的第一金属间化合物层，形成在第一金属间化合物上的Cu 6 Sn 5的第二金属间化合物层和形成在第二金属间化合物层上的表面层。 表层是纯锡或锡合金的电镀材料，平均厚度为约0.3μm至1.0μm，最大厚度为约1.0μm或更小。 第二金属间化合物层与第一金属间化合物层的体积比为约1.5以上。