公开(公告)号：US08399363B1

公开(公告)日：2013-03-19

申请号：US13036818

申请日：2011-02-28

申请人： Jung-chan Lee ,  Seung-jae Lee ,  Jin-gi Hong ,  Young-min Ko

发明人： Jung-chan Lee ,  Seung-jae Lee ,  Jin-gi Hong ,  Young-min Ko

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/76

CPC分类号： H01L21/76229 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02263 ,  H01L21/02312 ,  H01L21/3105

摘要： Methods of forming integrated circuit substrates include forming first and second trenches having unequal widths in a semiconductor substrate and then depositing a first oxide layer at a first temperature into the first and second trenches. The first oxide layer has a thickness sufficient to completely fill the first trench but only partially fill the second trench, which is wider than the first trench. A step is also performed to selectively remove a portion of the first oxide layer from a bottom of the second trench. A second oxide layer is then deposited at a second temperature onto the bottom of the second trench. The second temperature is greater than the first temperature. For example, the first temperature may be in a range from about 300° C. to about 460° C. and the second temperature may be in a range from about 500° C. to about 600° C.

摘要翻译： 形成集成电路基板的方法包括在半导体衬底中形成具有不等宽度的第一和第二沟槽，然后在第一温度下将第一氧化物层沉积到第一和第二沟槽中。 第一氧化物层具有足以完全填充第一沟槽但仅部分填充比第一沟槽宽的第二沟槽的厚度。 还执行步骤以从第二沟槽的底部选择性地去除第一氧化物层的一部分。 然后将第二氧化物层在第二温度下沉积到第二沟槽的底部。 第二温度大于第一温度。 例如，第一温度可以在约300℃至约460℃的范围内，第二温度可以在约500℃至约600℃的范围内。

公开(公告)号：US5776250A

公开(公告)日：1998-07-07

申请号：US768700

申请日：1996-12-18

申请人： Dong-Hwa Shin ,  Young-Min Ko

发明人： Dong-Hwa Shin ,  Young-Min Ko

IPC分类号： H01L21/027 ,  B05C11/08 ,  B05C11/10 ,  B08B3/02 ,  G03F7/16 ,  B05B1/28 ,  B05B3/04 ,  B05C11/02 ,  B08B3/04

CPC分类号： B05C11/08 ,  B08B3/02 ,  G03F7/162 ,  B05C11/1039 ,  Y10S134/902

摘要： A device is for recovering superfluous photoresist material exhausted from a spin coater having a drive motor alternately operated at a high speed and a low speed at predetermined intervals. The device includes a solution collecting member into which superfluous photoresist material and cleaning solution are collected after a photoresist is coated onto a wafer and the wafer is cleaned during operation of the drive motor. The solution collecting member has a groove circumferentially formed therein to allow the superfluous photoresist material to flow therein. First and second discharge pipes communicate with the solution collecting member to drain the superfluous photoresist material and a cleaning solution and a third discharging pipe communicates with the groove formed in the solution collecting member. An actuator is provided to move a blocking member between an open position and closed position to open and close the groove.

摘要翻译： 一种装置用于回收从具有以预定间隔以高速和低速交替操作的驱动马达的旋涂机排出的多余的光致抗蚀剂材料。 该装置包括溶液收集构件，其中在将光致抗蚀剂涂覆到晶片上之后，多余的光致抗蚀剂材料和清洁溶液被收集到其中，并且在驱动电动机的操作期间清洁晶片。 溶液收集构件具有周向形成在其中的凹槽，以允许多余的光致抗蚀剂材料在其中流动。 第一和第二排出管与溶液收集构件连通以排出多余的光致抗蚀剂材料，并且清洁溶液和第三排出管与形成在溶液收集构件中的凹槽连通。 提供致动器以使阻挡构件在打开位置和关闭位置之间移动以打开和关闭凹槽。