公开(公告)号：US07855131B2

公开(公告)日：2010-12-21

申请号：US12385782

申请日：2009-04-20

申请人： Hirokazu Fujiwara ,  Masaki Konishi ,  Takeo Yamamoto ,  Eiichi Okuno ,  Yukihiko Watanbe ,  Takashi Katsuno

发明人： Hirokazu Fujiwara ,  Masaki Konishi ,  Takeo Yamamoto ,  Eiichi Okuno ,  Yukihiko Watanbe ,  Takashi Katsuno

IPC分类号： H01L21/322

CPC分类号： H01L29/47 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/66143 ,  H01L29/872

摘要： A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.

摘要翻译： 半导体器件的制造方法包括在碳化硅衬底中掺杂导电杂质的工艺，在碳化硅衬底的表面上形成覆盖层的工艺，激活掺杂在碳化硅衬底中的导电杂质的工艺， 在第一退火工艺之后氧化盖层的工艺，以及去除氧化的盖层的工艺。 优选的是，盖层由包括金属碳化物的材料形成。 由于金属碳化物的氧化开始温度相对较低，如果在盖层中包括金属碳化物，则盖层的氧化变得容易。 具体而言，优选盖层由氧化开始温度为1000℃以下的金属碳化物形成，例如碳化钽。