SYSTEM AND METHOD FOR TEST PATTERN FOR LITHOGRAPHY PROCESS
    1.
    发明申请
    SYSTEM AND METHOD FOR TEST PATTERN FOR LITHOGRAPHY PROCESS 有权
    用于图像处理的测试图案的系统和方法

    公开(公告)号:US20110318673A1

    公开(公告)日:2011-12-29

    申请号:US13046733

    申请日:2011-03-12

    IPC分类号: G03F7/20 G03F1/14

    CPC分类号: G03F1/44

    摘要: A method for performing a photolithography process includes providing a reticle on a projection apparatus, the reticle having a test pattern defined thereon, the test pattern including a plurality of one-dimensional structures and a plurality of two-dimensional structures. The test pattern defined on the reticle is transferred to at least one area on a wafer. The projection apparatus is focused on the test pattern transferred on the wafer during a photolithography process to perform a process monitoring.

    摘要翻译: 执行光刻工艺的方法包括在投影设备上提供掩模版,所述掩模版具有限定在其上的测试图案,所述测试图案包括多个一维结构和多个二维结构。 将在掩模版上定义的测试图案转移到晶片上的至少一个区域。 投影装置在光刻处理过程中聚焦于在晶片上转印的测试图案,以进行处理监视。

    System and method for test pattern for lithography process
    2.
    发明授权
    System and method for test pattern for lithography process 有权
    光刻工艺测试图案的系统和方法

    公开(公告)号:US08501376B2

    公开(公告)日:2013-08-06

    申请号:US13046733

    申请日:2011-03-12

    IPC分类号: G03F9/00

    CPC分类号: G03F1/44

    摘要: A method for performing a photolithography process includes providing a reticle on a projection apparatus, the reticle having a test pattern defined thereon, the test pattern including a plurality of one-dimensional structures and a plurality of two-dimensional structures. The test pattern defined on the reticle is transferred to at least one area on a wafer. The projection apparatus is focused on the test pattern transferred on the wafer during a photolithography process to perform a process monitoring.

    摘要翻译: 执行光刻工艺的方法包括在投影设备上提供掩模版,所述掩模版具有限定在其上的测试图案,所述测试图案包括多个一维结构和多个二维结构。 将在掩模版上定义的测试图案转移到晶片上的至少一个区域。 投影装置在光刻处理过程中聚焦于在晶片上转印的测试图案,以进行处理监视。