公开(公告)号：US20210384091A1

公开(公告)日：2021-12-09

申请号：US17286737

申请日：2019-10-10

Applicant: ABB Power Grids Switzerland AG

Inventor： Jagoda Dobrzynska ,  Jan Vobecky ,  David Guillon ,  Tobias Wikstroem

IPC: H01L23/051 ,  H01L23/10 ,  H01L23/31 ,  H01L21/56

Abstract: A power semiconductor device includes a semiconductor wafer having a junction and a junction termination laterally surrounding the junction. A protection layer covers the lateral side of the semiconductor wafer and covers the second main side at least in an area of the junction termination. A first metal disk is arranged on the first main side to cover the first main side of the semiconductor wafer. An interface between the first metal disk and the semiconductor wafer is a free floating interface. A metal layer sandwiched between the first metal disk and the semiconductor wafer.