公开(公告)号：US20160020764A1

公开(公告)日：2016-01-21

申请号：US14774026

申请日：2013-04-05

Applicant: ABB TECHNOLOGY LTD

Inventor： Annika LOKRANTZ ,  Kristoffer NILSSON ,  Ying JIANG-HÄFNER ,  Christer SJÖBERG ,  Lars DÖFNÄS ,  Wim VAN-DER-MERWE

IPC: H03K17/567 ,  H02M7/537

CPC classification number: H03K17/567 ,  H02M7/537 ,  H02M2001/0054 ,  H02M2001/0058 ,  H03K17/18 ,  H03K17/6871 ,  H03K2217/0027 ,  H03K2217/0036

Abstract: A method for controlling a first and a second reverse-conducting insulated gate bipolar transistor (RC-IGBT), electrically connected in series, is disclosed. A collector of the first RC-IGBT is electrically connected to a positive pole of a direct current voltage source, and an emitter of the second RC-IGBT is electrically connected to a negative pole of the DC voltage source. Further, an emitter of the first RC-IGBT is electrically connected to a collector of the second RC-IGBT to form an alternating current terminal. A gate voltage is applied to respective gates of the first and second RC-IGBTs, wherein the gate voltage is controlled based on a magnitude and a direction of an output current on the AC terminal and on a command signal alternating between a first and a second value.

Abstract translation: 公开了一种串联电连接的第一和第二反向导通绝缘栅双极晶体管（RC-IGBT）的控制方法。 第一RC-IGBT的集电极电连接到直流电压源的正极，并且第二RC-IGBT的发射极电连接到直流电压源的负极。 此外，第一RC-IGBT的发射极电连接到第二RC-IGBT的集电极，以形成交流端子。 栅极电压施加到第一和第二RC-IGBT的各个栅极，其中基于AC端子上的输出电流的大小和方向以及在第一和第二RC之间交替的命令信号来控制栅极电压 值。