公开(公告)号：US20160313191A1

公开(公告)日：2016-10-27

申请号：US15078588

申请日：2016-03-23

Applicant: ABB Technology AG

Inventor： Vinoth Sundaramoorthy ,  Enea Bianda ,  Richard Bloch ,  Lulian Nistor ,  Gerold Knapp

IPC: G01K7/01

CPC classification number: G01K7/01

Abstract: The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (Ic) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of; measuring the characteristics of an emitter voltage drop (VEE′) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE′) at the auxiliary emitter (EA) during a switching operation of the IGBT device; and determining the junction temperature and/or the collector current (IC) based on the characteristics of the emitter voltage drop (VEE′).

公开(公告)号：US09683898B2

公开(公告)日：2017-06-20

申请号：US15078588

申请日：2016-03-23

Applicant: ABB Technology AG

Inventor： Vinoth Sundaramoorthy ,  Enea Bianda ,  Richard Bloch ,  Iulian Nistor ,  Gerold Knapp

IPC: G01K7/00 ,  G01K7/01

CPC classification number: G01K7/01

Abstract: The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (IC) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of; measuring the characteristics of an emitter voltage drop (VEE′) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE′) at the auxiliary emitter (EA) during a switching operation of the IGBT device; and determining the junction temperature and/or the collector current (IC) based on the characteristics of the emitter voltage drop (VEE′).