公开(公告)号：US20200142533A1

公开(公告)日：2020-05-07

申请号：US16671942

申请日：2019-11-01

Applicant: ABOV SEMICONDUCTOR CO., LTD.

Inventor： Young Jin SEO ,  Byoung Su JEONG ,  Seok Hyun JEE ,  Yun Yeong JANG

IPC: G06F3/041 ,  G06F3/044

Abstract: Disclosed are a proximity sensor and a proximity detection method for the proximity sensor. The proximity sensor includes: a reception circuit configured to receive a first electrical signal which is generated based on proximity of the conductor; a first signal processing circuit configured to determine whether or not the conductor is in close proximity to the electronic device by using the first electrical signal, a first baseline value, and a threshold value; a temperature detection circuit configured to detect the temperature of the proximity sensor independently of the first electrical signal; and a second signal processing circuit configured to, when the conductor is in close proximity to the electronic device and also a temperature variation equal to or larger than a reference value is detected by the temperature detection circuit, generate a second baseline value by adding a temporary compensation value to the first baseline value.