公开(公告)号：US09985230B2

公开(公告)日：2018-05-29

申请号：US14824580

申请日：2015-08-12

Applicant: ACADEMIA SINICA

Inventor： Kuei-Hsien Chen ,  Hsieh-Cheng Han ,  Ching-Chun Chang ,  Li-Chyong Chen ,  Chan-Yi Du

IPC: H01L51/50 ,  H01L51/42 ,  H01L51/44 ,  H01L51/00

CPC classification number: H01L51/424 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0046 ,  H01L51/0047 ,  H01L51/005 ,  H01L51/0055 ,  H01L51/4246 ,  H01L51/44 ,  Y02E10/549

Abstract: The present invention is related to a process for reducing surface energy of a hole transport layer. The disclosed process comprises providing a hole transport layer; and providing a fluorine-containing layer directly on said hole transport layer. The configuration of said fluorine-containing layer reduces the structural disorder of an active layer and is able to recover a moisture-degraded hole transport layer, and thereby improves the performance of an electric device containing the same.