公开(公告)号：US20210225793A1

公开(公告)日：2021-07-22

申请号：US16844972

申请日：2020-04-09

申请人： AG MATERIALS TECHNOLOGY CO.,LTD.

发明人： Hsing-Hua TSAI ,  An-Chi CHUANG ,  Po-Ching WU ,  Chung-Hsin CHOU

IPC分类号： H01L23/00

摘要： A silver nano-twinned thin film structure and a method for forming the same are provided. A silver nano-twinned thin film structure, including: a substrate; an adhesive-lattice-buffer layer over the substrate; and a silver nano-twinned thin film over the adhesive-lattice-buffer layer, wherein the silver nano-twinned thin film comprises parallel-arranged twin boundaries, and a cross-section of the silver nano-twinned thin film reveals that 50% or more of all twin boundaries are parallel-arranged twin boundaries, wherein the parallel-arranged twin boundaries include Σ 3 and Σ9 boundaries, wherein the Σ3 and Σ9 boundaries include 95% or more crystal orientation.