公开(公告)号：US10365417B2

公开(公告)日：2019-07-30

申请号：US15279700

申请日：2016-09-29

Applicant: AGC Inc.

Inventor： Makoto Hasegawa ,  Takashi Sugiyama

IPC: C07D209/08 ,  C07D207/20 ,  G02B5/26 ,  G02B5/22 ,  G02B5/20

Abstract: A near-infrared cut filter has an absorption layer and a reflection layer and satisfies following requirements: average transmittance (R) of 620-750 nm is ≤20%, average transmittance (G) of 495-570 nm is ≥90%, and a ratio (R)/(G) is ≤0.20; |T0(600-725)−T30(600-725)| is ≤3%·nm where T0(600-725) is a transmittance integral value of 600-725 nm in a spectral transmittance curve (0°), and T30(600-725) is a transmittance integral value of 600-725 nm in a spectral transmittance curve (30°); wavelengths λIRT(80), λIRT(50), and λIRT(20) where transmittance becomes 80%, 50%, and 20% respectively in 550-750 nm in the spectral transmittance curve (0°) normalized by maximum transmittance in 450-650 nm satisfy following formulae: 0≤λIRT(80)−λT(80)≤30 nm, 0≤λIRT(50)−λT(50)≤35 nm, and 0≤λIRT(20)−λT(20)≤37 nm where λT(80), λT(50), and λT(20) are wavelengths on a long wavelength side where relative visibility of 0.8, 0.5 and 0.2 is exhibited in a relative visibility curve.

公开(公告)号：US10310150B2

公开(公告)日：2019-06-04

申请号：US15279688

申请日：2016-09-29

Applicant: AGC Inc.

Inventor： Takashi Sugiyama ,  Katsumasa Hosoi ,  Atsushi Komori ,  Yoshiharu Ooi ,  Makoto Hasegawa

IPC: G02B5/20 ,  G02B5/26 ,  G02B5/22 ,  G02B5/28 ,  H01L27/146

Abstract: There are provided a near-infrared cut filter having a sufficient near-infrared blocking property and being capable of reducing or preventing, in a solid-state imaging device using the near-infrared cut filter, occurrence of a phenomenon that an object which did not exist on the original subject appears in a taken image, and also a highly sensitive solid-state imaging device having the near-infrared cut filter. A near-infrared cut filter includes a stack having a near-infrared absorbing glass substrate and a near-infrared absorbing layer containing a near-infrared absorbing dye and a transparent resin on at least one main surface of the near-infrared absorbing glass substrate, and a dielectric multilayer film formed on at least one main surface of the stack, wherein maximum transmittance at an incident angle of 31 to 60 degrees with respect to light with a wavelength of from 775 to 900 nm is 50% or less.