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公开(公告)号:US20240101467A1
公开(公告)日:2024-03-28
申请号:US18520651
申请日:2023-11-28
Applicant: AGC Inc.
Inventor: Takeyuki KATO , Yutaka KUROIWA , Nobuo INUZUKA , Hirofumi YAMAMOTO
CPC classification number: C03C4/04 , C03B32/02 , C03C3/095 , C03C15/00 , H05K1/0237 , H05K1/0306 , C03C2204/00
Abstract: The present invention relates to a photosensitive glass in which a Li2SiO3 crystal is precipitated by exposure and heat treatment, in which the photosensitive glass has a value of Formula (A) described below of 0.50 or more and 0.75 or less, and the photosensitive glass has a dielectric loss tangent at 20° C. and 10 GHz of 0.0090 or less, [Li2O]/([Li2O]+[Na2O]+[K2O]) Formula (A), in Formula (A), [Li2O], [Na2O], and [K2O] respectively indicate contents of Li2O, Na2O, and K2O in the photosensitive glass in terms of mole percentage based on oxides.
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公开(公告)号:US20250034029A1
公开(公告)日:2025-01-30
申请号:US18911496
申请日:2024-10-10
Applicant: AGC Inc.
Inventor: Takeyuki KATO , Yuya HAMADA , Seiji INABA
Abstract: The present invention relates to a glass including, in mol % in terms of oxides: 68% or more of SiO2; 0.1% to 8% of Al2O3; and 0.1% to 4% of SrO, in which [SiO2]+[B2O3] is 88% or more, [B2O3]−([RO]+[R2O]−[Al2O3]) is 27% or less, a relative dielectric constant at 25° C. and a frequency of 10 GHz is 4.5 or less, a dielectric loss tangent at 25° C. and a frequency of 10 GHz is 0.005 or less, ΔAbs-OH is 4.0 or less, a total content (RO) of MgO, CaO, SrO, and BaO is more than 0% to 6%, a total content (R2O) of Li2O, Na2O, and K2O is 0% to 1%, [Al2O3]−[RO] is −3% to less than 8%, [Al2O3]×[RO] is more than 0 to 30, [MgO]+[CaO] is 0.1% to 5.9%, and [MgO]/([MgO]+[Al2O3]) is 0 to 0.45.
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公开(公告)号:US20240098891A1
公开(公告)日:2024-03-21
申请号:US18520642
申请日:2023-11-28
Applicant: AGC Inc.
Inventor: Takeyuki KATO , Yutaka KUROIWA , Nobuo INUZUKA , Hirofumi YAMAMOTO
CPC classification number: H05K1/0306 , H05K1/0243 , H05K1/0251 , H01L23/15
Abstract: The present invention relates to a circuit board for a high-frequency device, including: a glass substrate in which a crystal is precipitated and cuttable by etching, and which has a dielectric loss tangent at 20° C. and 10 GHz of 0.0090 or less, and relates to a high-frequency device including the circuit board.
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