公开(公告)号：US20190031502A1

公开(公告)日：2019-01-31

申请号：US16071899

申请日：2017-01-26

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Vivek CHIDAMBARAM ,  Li Yan SIOW ,  Qing Xin ZHANG ,  Sunil WICKRAMANAYAKA

IPC: B81C1/00

Abstract: There is provided a method of bonding a first substrate and a second substrate, the method comprising: providing an aluminium (Al) connection having a first width on one side of a first substrate; providing a germanium (Ge) connection having a second width on one side of a second substrate, wherein the second width is larger than the first width; and bonding the Al connection on the first substrate and the Ge connection on the second substrate by eutectic bonding of at least a portion of the Al connection and at least a portion of the Ge connection to form an Al—Ge eutectic melt, wherein the Al—Ge eutectic melt is confined within the second width of the Ge connection.